Part Details for HYMP112S64CP6-S6 by SK Hynix Inc
Overview of HYMP112S64CP6-S6 by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Robotics and Drones
Part Details for HYMP112S64CP6-S6
HYMP112S64CP6-S6 CAD Models
HYMP112S64CP6-S6 Part Data Attributes
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HYMP112S64CP6-S6
SK Hynix Inc
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Datasheet
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HYMP112S64CP6-S6
SK Hynix Inc
DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, DIMM200,24 | |
| Pin Count | 200 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XZMA-N200 | |
| Length | 67.6 mm | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 3.8 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | ZIG-ZAG | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 30 mm |
Alternate Parts for HYMP112S64CP6-S6
This table gives cross-reference parts and alternative options found for HYMP112S64CP6-S6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYMP112S64CP6-S6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HYMP512S64CP8-S5 | SK Hynix Inc | Check for Price | DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200 | HYMP112S64CP6-S6 vs HYMP512S64CP8-S5 |
| MT8HTF12864HDY-800XX | Micron Technology Inc | Check for Price | DDR DRAM Module, 128MX64, CMOS, LEAD FREE, SODIMM-200 | HYMP112S64CP6-S6 vs MT8HTF12864HDY-800XX |
| MT8HTF12864HDZ-667XX | Micron Technology Inc | Check for Price | DDR DRAM Module, 128MX64, CMOS, HALOGEN FREE, MO-224, SODIMM-200 | HYMP112S64CP6-S6 vs MT8HTF12864HDZ-667XX |
| NT1GT64U8HB0BN-25D | Nanya Technology Corporation | Check for Price | DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200 | HYMP112S64CP6-S6 vs NT1GT64U8HB0BN-25D |
| M470T2864QH3-LE7 | Samsung Semiconductor | Check for Price | DDR DRAM Module, 128MX64, 0.4ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 | HYMP112S64CP6-S6 vs M470T2864QH3-LE7 |
| HYS64T128021EDL-2.5B2 | Qimonda AG | Check for Price | DDR DRAM Module, 128MX64, 0.4ns, CMOS, GREEN, SO-DIMM-200 | HYMP112S64CP6-S6 vs HYS64T128021EDL-2.5B2 |
| W3HG264M64EEU806D4IGG | Microsemi Corporation | Check for Price | DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | HYMP112S64CP6-S6 vs W3HG264M64EEU806D4IGG |
| MT8HSF12864HDY-53EXX | Micron Technology Inc | Check for Price | DDR DRAM Module, 128MX64, CMOS, LEAD FREE, SODIMM-200 | HYMP112S64CP6-S6 vs MT8HSF12864HDY-53EXX |
| EBE11UE6ACUA-8G-E | Elpida Memory Inc | Check for Price | DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200 | HYMP112S64CP6-S6 vs EBE11UE6ACUA-8G-E |
| MT8HTF12864HD-40EXX | Micron Technology Inc | Check for Price | DDR DRAM Module, 128MX64, CMOS, SODIMM-200 | HYMP112S64CP6-S6 vs MT8HTF12864HD-40EXX |