Datasheets
HYMD216646CL6-H by: SK Hynix Inc

DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184

Part Details for HYMD216646CL6-H by SK Hynix Inc

Overview of HYMD216646CL6-H by SK Hynix Inc

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Applications Computing and Data Storage Energy and Power Systems

Part Details for HYMD216646CL6-H

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HYMD216646CL6-H Part Data Attributes

HYMD216646CL6-H SK Hynix Inc
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HYMD216646CL6-H SK Hynix Inc DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code DIMM
Package Description DIMM, DIMM184
Pin Count 184
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode SINGLE BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184
Memory Density 1073741824 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Supply Current-Max 1.3 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for HYMD216646CL6-H

This table gives cross-reference parts and alternative options found for HYMD216646CL6-H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYMD216646CL6-H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYMD216646DL6-K DDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646DL6-K
HYMD216646C6-H DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646C6-H
HYMD216646L6-K DDR DRAM Module, 16MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646L6-K
HYMD216646CL6-M DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646CL6-M
HYMD216646DL6-M DDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646DL6-M
HYMD216646A6-K DDR DRAM Module, 16MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646A6-K
M368L1624DTL-CB0 DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor HYMD216646CL6-H vs M368L1624DTL-CB0
V826616J24SAIY-B0 DDR DRAM Module, 16MX64, 0.75ns, CMOS, PDMA184 ProMOS Technologies Inc HYMD216646CL6-H vs V826616J24SAIY-B0
M368L1624DTL-CA2 DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor HYMD216646CL6-H vs M368L1624DTL-CA2
HYMD216646A6-M DDR DRAM Module, 16MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646A6-M
Part Number Description Manufacturer Compare
M368L1714DT1-LA2 DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor HYMD216646CL6-H vs M368L1714DT1-LA2
KMM368L1714BT-F0 DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184 Samsung Semiconductor HYMD216646CL6-H vs KMM368L1714BT-F0
W3EG6418S202D3 DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 Microsemi Corporation HYMD216646CL6-H vs W3EG6418S202D3
M368L1713CT1-LB0 DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor HYMD216646CL6-H vs M368L1713CT1-LB0
M368L1713CTL-LB3 DDR DRAM Module, 16MX64, 0.7ns, CMOS, DIMM-184 Samsung Semiconductor HYMD216646CL6-H vs M368L1713CTL-LB3
MT4VDDT1664AY-265A1 DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 Micron Technology Inc HYMD216646CL6-H vs MT4VDDT1664AY-265A1
MT4VDDT1664AIG-202XX DDR DRAM Module, 16MX64, 0.8ns, CMOS, MO-206, DIMM-184 Micron Technology Inc HYMD216646CL6-H vs MT4VDDT1664AIG-202XX
HYMD216646A6-L DDR DRAM Module, 16MX64, 0.8ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646A6-L
HYMD216646DP6J-J DDR DRAM Module, 16MX16, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 SK Hynix Inc HYMD216646CL6-H vs HYMD216646DP6J-J
M368L1713ETM-LCC DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 Samsung Semiconductor HYMD216646CL6-H vs M368L1713ETM-LCC

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