Datasheets
HYB5116165BSJ-70 by:
Infineon Technologies AG
Infineon Technologies AG
Siemens
Not Found

EDO DRAM, 1MX16, 70ns, CMOS, PDSO42

Part Details for HYB5116165BSJ-70 by Infineon Technologies AG

Results Overview of HYB5116165BSJ-70 by Infineon Technologies AG

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Applications Consumer Electronics

HYB5116165BSJ-70 Information

HYB5116165BSJ-70 by Infineon Technologies AG is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for HYB5116165BSJ-70

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HYB5116165BSJ-70 Part Data Attributes

HYB5116165BSJ-70 Infineon Technologies AG
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HYB5116165BSJ-70 Infineon Technologies AG EDO DRAM, 1MX16, 70ns, CMOS, PDSO42
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 70 ns
I/O Type COMMON
JESD-30 Code R-PDSO-J42
JESD-609 Code e0
Memory Density 16777216 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Terminals 42
Number of Words 1048576 words
Number of Words Code 1000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Equivalence Code SOJ42,.44
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 4096
Self Refresh YES
Standby Current-Max 0.001 A
Supply Current-Max 0.08 mA
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL