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HYB5116160BSJ-50 by:

Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42

Part Details for HYB5116160BSJ-50 by Siemens

Overview of HYB5116160BSJ-50 by Siemens

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Applications Consumer Electronics Computing and Data Storage

Part Details for HYB5116160BSJ-50

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HYB5116160BSJ-50 Part Data Attributes:

HYB5116160BSJ-50 Siemens
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HYB5116160BSJ-50 Siemens Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-J42
Memory Density 16777216 bit
Memory IC Type FAST PAGE DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 42
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 4096
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Position DUAL

Alternate Parts for HYB5116160BSJ-50

This table gives cross-reference parts and alternative options found for HYB5116160BSJ-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB5116160BSJ-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY5118160CSLJC-80 Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 SK Hynix Inc HYB5116160BSJ-50 vs HY5118160CSLJC-80
KM416V1200AJ-F6 Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, PLASTIC, SOJ-42 Samsung Semiconductor HYB5116160BSJ-50 vs KM416V1200AJ-F6
MSM51V18165F-70JS EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 LAPIS Semiconductor Co Ltd HYB5116160BSJ-50 vs MSM51V18165F-70JS
M5M4V16160CJ-5 Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Mitsubishi Electric HYB5116160BSJ-50 vs M5M4V16160CJ-5
MSM5116160DSL-70JS Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB5116160BSJ-50 vs MSM5116160DSL-70JS
UPD4216165LLE-A50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 NEC Electronics America Inc HYB5116160BSJ-50 vs UPD4216165LLE-A50
HM51W16165LJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Elpida Memory Inc HYB5116160BSJ-50 vs HM51W16165LJ-5
TMS426169AP-60DZ 1MX16 EDO DRAM, 60ns, PDSO42 Texas Instruments HYB5116160BSJ-50 vs TMS426169AP-60DZ
HM5116160LJ-7 Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Hitachi Ltd HYB5116160BSJ-50 vs HM5116160LJ-7
M5M4V16160CJ-5S Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Mitsubishi Electric HYB5116160BSJ-50 vs M5M4V16160CJ-5S

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