Part Details for HYB39S64160BTL-10 by Infineon Technologies AG
Overview of HYB39S64160BTL-10 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for HYB39S64160BTL-10
HYB39S64160BTL-10 CAD Models
HYB39S64160BTL-10 Part Data Attributes
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HYB39S64160BTL-10
Infineon Technologies AG
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Datasheet
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HYB39S64160BTL-10
Infineon Technologies AG
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP2 | |
| Package Description | 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.09 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYB39S64160BTL-10
This table gives cross-reference parts and alternative options found for HYB39S64160BTL-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S64160BTL-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB39S64162AT-10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | HYB39S64160BTL-10 vs HYB39S64162AT-10 |
| MT48LC4M16A2TG-10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | HYB39S64160BTL-10 vs MT48LC4M16A2TG-10 |
| TC59S6416FTL-80 | IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | HYB39S64160BTL-10 vs TC59S6416FTL-80 |
| V54C365164VDT8L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | HYB39S64160BTL-10 vs V54C365164VDT8L |
| HYB39S64160T-80 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | HYB39S64160BTL-10 vs HYB39S64160T-80 |
| HYB39S64160AT-10 | Synchronous DRAM, 4MX16, 8ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | HYB39S64160BTL-10 vs HYB39S64160AT-10 |
| IS42S16400L-10T | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | Integrated Silicon Solution Inc | HYB39S64160BTL-10 vs IS42S16400L-10T |
| V54C365164VDT8 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | HYB39S64160BTL-10 vs V54C365164VDT8 |
| AS4SD4M16A2DG-10/883C | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micross Components | HYB39S64160BTL-10 vs AS4SD4M16A2DG-10/883C |
| VG36641642AT-10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | HYB39S64160BTL-10 vs VG36641642AT-10 |