Part Details for HYB39S512160AT-8 by Infineon Technologies AG
Overview of HYB39S512160AT-8 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for HYB39S512160AT-8
HYB39S512160AT-8 CAD Models
HYB39S512160AT-8 Part Data Attributes
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HYB39S512160AT-8
Infineon Technologies AG
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Datasheet
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HYB39S512160AT-8
Infineon Technologies AG
Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.27 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYB39S512160AT-8
This table gives cross-reference parts and alternative options found for HYB39S512160AT-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S512160AT-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48V32M16LFP-8IT | Synchronous DRAM, 32MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | HYB39S512160AT-8 vs MT48V32M16LFP-8IT |
| HYB39S512160ATL-8 | Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | HYB39S512160AT-8 vs HYB39S512160ATL-8 |
| MT48H32M16LFP-8IT | Synchronous DRAM, 32MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | HYB39S512160AT-8 vs MT48H32M16LFP-8IT |
| IS45S16320B-7TLA2 | Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 | Integrated Silicon Solution Inc | HYB39S512160AT-8 vs IS45S16320B-7TLA2 |
| AS4C32M16SB-7BINTR | Synchronous DRAM, | Alliance Memory Inc | HYB39S512160AT-8 vs AS4C32M16SB-7BINTR |
| MT48V32M16LFTG-6AIT | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | HYB39S512160AT-8 vs MT48V32M16LFTG-6AIT |
| IS42S16320B-6TL | Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 | Integrated Silicon Solution Inc | HYB39S512160AT-8 vs IS42S16320B-6TL |
| IS42R16320D-7TLI | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSSOP2, 54 PIN | Integrated Silicon Solution Inc | HYB39S512160AT-8 vs IS42R16320D-7TLI |
| HM5251165BTD-A6 | Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Hitachi Ltd | HYB39S512160AT-8 vs HM5251165BTD-A6 |
| MT48H32M16LFTG-6AIT | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | HYB39S512160AT-8 vs MT48H32M16LFTG-6AIT |