Datasheets
HYB39S256160DC-6 by:

Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54

Part Details for HYB39S256160DC-6 by Infineon Technologies AG

Overview of HYB39S256160DC-6 by Infineon Technologies AG

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Part Details for HYB39S256160DC-6

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HYB39S256160DC-6 Part Data Attributes:

HYB39S256160DC-6 Infineon Technologies AG
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HYB39S256160DC-6 Infineon Technologies AG Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code BGA
Package Description 12 X 8 MM, PLASTIC, TFBGA-54
Pin Count 54
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B54
JESD-609 Code e0
Length 12 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.22 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for HYB39S256160DC-6

This table gives cross-reference parts and alternative options found for HYB39S256160DC-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S256160DC-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB39S256160DCL-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG HYB39S256160DC-6 vs HYB39S256160DCL-6
HYB39S256160DFL-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG HYB39S256160DC-6 vs HYB39S256160DFL-6
HYB39S256160DF-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG HYB39S256160DC-6 vs HYB39S256160DF-6
Part Number Description Manufacturer Compare
K4S561632H-UI600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP-54 Samsung Semiconductor HYB39S256160DC-6 vs K4S561632H-UI600
HYB39S256160DCL-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG HYB39S256160DC-6 vs HYB39S256160DCL-6
K4S561632H-TP600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, TSOP-54 Samsung Semiconductor HYB39S256160DC-6 vs K4S561632H-TP600
K4S561632J-UC600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor HYB39S256160DC-6 vs K4S561632J-UC600
W9825G6EH-6C Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp HYB39S256160DC-6 vs W9825G6EH-6C
K4S561632J-UC60T Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor HYB39S256160DC-6 vs K4S561632J-UC60T
K4S561632H-TL600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HYB39S256160DC-6 vs K4S561632H-TL600
K4S561632C-TE60 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HYB39S256160DC-6 vs K4S561632C-TE60
EDS2516APTA-60L Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, PLASTIC, TSOP2-54 Elpida Memory Inc HYB39S256160DC-6 vs EDS2516APTA-60L
K4S561632E-TL600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HYB39S256160DC-6 vs K4S561632E-TL600

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