Datasheets
HYB3116165BSJ-50 by:

EDO DRAM, 1MX16, 50ns, CMOS, PDSO42

Part Details for HYB3116165BSJ-50 by Infineon Technologies AG

Overview of HYB3116165BSJ-50 by Infineon Technologies AG

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Applications Consumer Electronics Education and Research Computing and Data Storage

Part Details for HYB3116165BSJ-50

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HYB3116165BSJ-50 Part Data Attributes:

HYB3116165BSJ-50 Infineon Technologies AG
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HYB3116165BSJ-50 Infineon Technologies AG EDO DRAM, 1MX16, 50ns, CMOS, PDSO42
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 50 ns
I/O Type COMMON
JESD-30 Code R-PDSO-J42
JESD-609 Code e0
Memory Density 16777216 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Terminals 42
Number of Words 1048576 words
Number of Words Code 1000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Equivalence Code SOJ42,.44
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 4096
Self Refresh YES
Standby Current-Max 0.001 A
Supply Current-Max 0.1 mA
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL

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