Datasheets
HYB3116160BSJ-50 by:

Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42

Part Details for HYB3116160BSJ-50 by Siemens

Overview of HYB3116160BSJ-50 by Siemens

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Applications Consumer Electronics

Part Details for HYB3116160BSJ-50

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HYB3116160BSJ-50 Part Data Attributes:

HYB3116160BSJ-50 Siemens
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HYB3116160BSJ-50 Siemens Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-J42
Memory Density 16777216 bit
Memory IC Type FAST PAGE DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 42
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 4096
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Position DUAL

Alternate Parts for HYB3116160BSJ-50

This table gives cross-reference parts and alternative options found for HYB3116160BSJ-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB3116160BSJ-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY51V18160BJC-80 Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 SK Hynix Inc HYB3116160BSJ-50 vs HY51V18160BJC-80
MB8118160B-60PJ Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 FUJITSU Limited HYB3116160BSJ-50 vs MB8118160B-60PJ
MT4C1M16C5DJ-6S Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Micron Technology Inc HYB3116160BSJ-50 vs MT4C1M16C5DJ-6S
M5M4V18165BJ-6T EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 Mitsubishi Electric HYB3116160BSJ-50 vs M5M4V18165BJ-6T
WPD1M16T-100TJM Fast Page DRAM, 1MX16, 100ns, CMOS, PDSO42, White Microelectronics HYB3116160BSJ-50 vs WPD1M16T-100TJM
HY51V16160BJC-70 Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 SK Hynix Inc HYB3116160BSJ-50 vs HY51V16160BJC-70
KM416V1000BJ-L6 Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Samsung Semiconductor HYB3116160BSJ-50 vs KM416V1000BJ-L6
HM5118160BJI-8 Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Hitachi Ltd HYB3116160BSJ-50 vs HM5118160BJI-8
UPD42S16160LLE-A60 Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 NEC Electronics Group HYB3116160BSJ-50 vs UPD42S16160LLE-A60
GM71V18163CJ-7 EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, LG Semicon Co Ltd HYB3116160BSJ-50 vs GM71V18163CJ-7

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