Part Details for HYB25D512160BTL-6 by Infineon Technologies AG
Overview of HYB25D512160BTL-6 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HYB25D512160BTL-6
HYB25D512160BTL-6 CAD Models
HYB25D512160BTL-6 Part Data Attributes
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HYB25D512160BTL-6
Infineon Technologies AG
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Datasheet
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HYB25D512160BTL-6
Infineon Technologies AG
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP2 | |
| Package Description | PLASTIC, TSOP2-66 | |
| Pin Count | 66 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.0016 A | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYB25D512160BTL-6
This table gives cross-reference parts and alternative options found for HYB25D512160BTL-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB25D512160BTL-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V32M16D3TG-8L | DDR DRAM, 32MX16, 0.8ns, CMOS, PDSO66, | Micron Technology Inc | HYB25D512160BTL-6 vs MT46V32M16D3TG-8L |
| HYB25D512160ATL-8 | DDR DRAM, 32MX16, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Infineon Technologies AG | HYB25D512160BTL-6 vs HYB25D512160ATL-8 |
| MT46V32M16D1TG-8L | DDR DRAM, 32MX16, 0.8ns, CMOS, PDSO66 | Micron Technology Inc | HYB25D512160BTL-6 vs MT46V32M16D1TG-8L |
| V58C2512164SDLI7I | DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | HYB25D512160BTL-6 vs V58C2512164SDLI7I |
| K4H511638J-LICC0 | DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | HYB25D512160BTL-6 vs K4H511638J-LICC0 |
| V58C2512164SDUI45E | DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | HYB25D512160BTL-6 vs V58C2512164SDUI45E |
| V58C2128164SEUI4I | DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | HYB25D512160BTL-6 vs V58C2128164SEUI4I |
| V58C2512164SDUI5DE | DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | HYB25D512160BTL-6 vs V58C2512164SDUI5DE |
| DPDD32MX16WSCY5-DP-XX0725 | DDR DRAM Module, 32MX16, CMOS, STACK, TSOP-66 | B&B Electronics Manufacturing Company | HYB25D512160BTL-6 vs DPDD32MX16WSCY5-DP-XX0725 |
| HYB25D512160BE-5 | DDR DRAM, 32MX16, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Infineon Technologies AG | HYB25D512160BTL-6 vs HYB25D512160BE-5 |