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Memory / DRAMs / HYB25D128160CE-6
Datasheets
HYB25D128160CE-6 by:
Infineon Technologies AG
Infineon Technologies AG
Qimonda AG
Not Found

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66

Part Details for HYB25D128160CE-6 by Infineon Technologies AG

Results Overview of HYB25D128160CE-6 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

HYB25D128160CE-6 Information

HYB25D128160CE-6 by Infineon Technologies AG is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for HYB25D128160CE-6

Part # Distributor Description Stock Price Buy
Bristol Electronics   1402
RFQ
Bristol Electronics   Min Qty: 1 1195
  • 1 $7.8400
  • 5 $5.0960
  • 11 $3.9200
  • 33 $3.6589
  • 70 $3.3971
  • 141 $3.2144
$3.2144 / $7.8400 Buy Now
Bristol Electronics   100
RFQ
Quest Components IC,SDRAM,DDR,4X2MX16,CMOS,TSSOP,66PIN,PLASTIC 956
  • 1 $10.5000
  • 441 $4.2000
  • 715 $3.6750
$3.6750 / $10.5000 Buy Now

Part Details for HYB25D128160CE-6

HYB25D128160CE-6 CAD Models

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HYB25D128160CE-6 Part Data Attributes

Parametric Data
HYB25D128160CE-6 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
HYB25D128160CE-6 Infineon Technologies AG DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TSOP2
Package Description GREEN, PLASTIC, TSOP2-66
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e3
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.0045 A
Supply Current-Max 0.215 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for HYB25D128160CE-6

This table gives cross-reference parts and alternative options found for HYB25D128160CE-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB25D128160CE-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
K4D261638E-TC500 Samsung Semiconductor Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 HYB25D128160CE-6 vs K4D261638E-TC500
IS43R16800CC-6TLI Integrated Silicon Solution Inc Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 HYB25D128160CE-6 vs IS43R16800CC-6TLI
MT46V8M16TG-5BL:A Micron Technology Inc Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 HYB25D128160CE-6 vs MT46V8M16TG-5BL:A
MT46V8M16TG-6TES:D Micron Technology Inc Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 HYB25D128160CE-6 vs MT46V8M16TG-6TES:D
V58C2128164SBE6I ProMOS Technologies Inc Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 HYB25D128160CE-6 vs V58C2128164SBE6I
IS43R16800CC-6TL-TR Integrated Silicon Solution Inc Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 HYB25D128160CE-6 vs IS43R16800CC-6TL-TR
HYB25D128160CT-6 Infineon Technologies AG Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 HYB25D128160CE-6 vs HYB25D128160CT-6
MT46V8M16P-5BL:A Micron Technology Inc Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 HYB25D128160CE-6 vs MT46V8M16P-5BL:A
HYB25DC128160CE-6 Qimonda AG Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 HYB25D128160CE-6 vs HYB25DC128160CE-6
V58C2128164SCLI6 ProMOS Technologies Inc Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 HYB25D128160CE-6 vs V58C2128164SCLI6
Part Number Manufacturer Composite Price Description Compare
HYB25D128160CE-5 Infineon Technologies AG Check for Price DDR DRAM, 8MX16, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 HYB25D128160CE-6 vs HYB25D128160CE-5
K4D261638E-TC36 Samsung Semiconductor Check for Price DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, TSOP2-66 HYB25D128160CE-6 vs K4D261638E-TC36
V58C2128404-75 Mosel Vitelic Corporation Check for Price DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 HYB25D128160CE-6 vs V58C2128404-75
HYB25D128160AT-8 Infineon Technologies AG Check for Price DDR DRAM, 8MX16, 0.8ns, CMOS, PDSO66, PLASTIC, TSOP2-66 HYB25D128160CE-6 vs HYB25D128160AT-8
HY5DU281622FTP-HI SK Hynix Inc Check for Price DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 HYB25D128160CE-6 vs HY5DU281622FTP-HI
HY5DV1291622TC-10 SK Hynix Inc Check for Price DDR DRAM, 8MX16, 1.5ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 HYB25D128160CE-6 vs HY5DV1291622TC-10
HY5DV1291622CLTC-80 SK Hynix Inc Check for Price DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 HYB25D128160CE-6 vs HY5DV1291622CLTC-80
NT5DS8M16HS-5T Nanya Technology Corporation Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 HYB25D128160CE-6 vs NT5DS8M16HS-5T
HY5DU1291622ATC-10 SK Hynix Inc Check for Price DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 HYB25D128160CE-6 vs HY5DU1291622ATC-10
K4H281638O-LCCC0 Samsung Semiconductor Check for Price DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 HYB25D128160CE-6 vs K4H281638O-LCCC0

HYB25D128160CE-6 Related Parts

HYB25D128160CE-6 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout guide for the HYB25D128160CE-6 in their application note AN2013-03. It includes guidelines for signal routing, decoupling, and thermal management to ensure optimal performance and reliability.

  • The HYB25D128160CE-6 has a thermal junction-to-case rating of 125°C. To manage thermal performance, ensure good airflow, use a heat sink if necessary, and follow Infineon's thermal design guidelines. Additionally, consider using thermal interface materials and thermal vias to improve heat dissipation.

  • The HYB25D128160CE-6 requires a stable power supply with minimal noise and ripple. Use a high-quality power supply with a low output impedance and add decoupling capacitors (e.g., 100nF and 10uF) close to the device to filter out noise and ensure stable operation.

  • The HYB25D128160CE-6 supports ECC (Error-Correcting Code) and parity bits for data integrity. Implement ECC algorithms in your firmware to detect and correct errors. Additionally, use checksums or CRCs to detect data corruption during transmission or storage.

  • To ensure EMC and EMI compliance, follow Infineon's guidelines for PCB layout, shielding, and filtering. Use EMI filters, ferrite beads, and shielding components to minimize radiation and susceptibility. Also, consider using a metal can or shielded package for the device.