Datasheets
HYB18TC512160BF-2.5 by: Qimonda AG

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84

Part Details for HYB18TC512160BF-2.5 by Qimonda AG

Overview of HYB18TC512160BF-2.5 by Qimonda AG

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Price & Stock for HYB18TC512160BF-2.5

Part # Distributor Description Stock Price Buy
Chip1Cloud 512-Mbit Double-Data-Rate-Two SDRAM 9000
RFQ

Part Details for HYB18TC512160BF-2.5

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HYB18TC512160BF-2.5 Part Data Attributes:

HYB18TC512160BF-2.5 Qimonda AG
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HYB18TC512160BF-2.5 Qimonda AG DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer QIMONDA AG
Part Package Code BGA
Package Description TFBGA, BGA84,9X15,32
Pin Count 84
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.007 A
Supply Current-Max 0.255 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 10 mm

Alternate Parts for HYB18TC512160BF-2.5

This table gives cross-reference parts and alternative options found for HYB18TC512160BF-2.5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18TC512160BF-2.5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB18TC512160BF-25F DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG HYB18TC512160BF-2.5 vs HYB18TC512160BF-25F
HYB18T512160BF-2.5 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG HYB18TC512160BF-2.5 vs HYB18T512160BF-2.5
Part Number Description Manufacturer Compare
EDE5116AHBG-8G-E DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Elpida Memory Inc HYB18TC512160BF-2.5 vs EDE5116AHBG-8G-E
K4T51163QE-ZCF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor HYB18TC512160BF-2.5 vs K4T51163QE-ZCF70
MT47H32M16BN-25LIT:D DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 10 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYB18TC512160BF-2.5 vs MT47H32M16BN-25LIT:D
K4T51163QE-ZPF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor HYB18TC512160BF-2.5 vs K4T51163QE-ZPF70
HY5PS121621BLFP-S6 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 SK Hynix Inc HYB18TC512160BF-2.5 vs HY5PS121621BLFP-S6
K4T51163QC-ZLE70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor HYB18TC512160BF-2.5 vs K4T51163QC-ZLE70
MT47H32M16FN-25EIT:D DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 10 X 12.50 MM, FBGA-84 Micron Technology Inc HYB18TC512160BF-2.5 vs MT47H32M16FN-25EIT:D
MT47H32M16HR-25IT:G DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 10 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYB18TC512160BF-2.5 vs MT47H32M16HR-25IT:G
MT47H32M16HR-25EAT:G DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 10 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYB18TC512160BF-2.5 vs MT47H32M16HR-25EAT:G
MT47H32M16BN-25EL:D DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 10 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYB18TC512160BF-2.5 vs MT47H32M16BN-25EL:D

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