Part Details for HYB18T256161BF-25 by Qimonda AG
Overview of HYB18T256161BF-25 by Qimonda AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Space Technology
Computing and Data Storage
Aerospace and Defense
Price & Stock for HYB18T256161BF-25
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | DDR DRAM, 16MX16, 0.5NS, CMOS, PBGA84 | 2000 |
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$5.2500 / $15.0000 | Buy Now |
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Quest Components | DDR DRAM, 16MX16, 0.5NS, CMOS, PBGA84 | 4 |
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$11.0000 / $15.0000 | Buy Now |
Part Details for HYB18T256161BF-25
HYB18T256161BF-25 CAD Models
HYB18T256161BF-25 Part Data Attributes:
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HYB18T256161BF-25
Qimonda AG
Buy Now
Datasheet
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Compare Parts:
HYB18T256161BF-25
Qimonda AG
DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | BGA | |
| Package Description | GREEN, PLASTIC, TFBGA-84 | |
| Pin Count | 84 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| Length | 12.5 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.004 A | |
| Supply Current-Max | 0.193 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 10 mm |
Alternate Parts for HYB18T256161BF-25
This table gives cross-reference parts and alternative options found for HYB18T256161BF-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T256161BF-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EDE2516ACSE-5C-E | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Elpida Memory Inc | HYB18T256161BF-25 vs EDE2516ACSE-5C-E |
| V59C1256164QALJ-37 | 16MX16 DDR DRAM, 0.5ns, PBGA84, GREEN, MO-207, FBGA-84 | ProMOS Technologies Inc | HYB18T256161BF-25 vs V59C1256164QALJ-37 |
| NT5TU16M16AG-37B | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 0.80 MM PITCH, LEAD FREE, BGA-84 | Nanya Technology Corporation | HYB18T256161BF-25 vs NT5TU16M16AG-37B |
| V59C1256164QAS-37 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, MO-207, FBGA-84 | ProMOS Technologies Inc | HYB18T256161BF-25 vs V59C1256164QAS-37 |
| V59C1256164QAF-37 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 | ProMOS Technologies Inc | HYB18T256161BF-25 vs V59C1256164QAF-37 |
| HYB18T256160AC-3.7 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 12.50 X 10 MM, MO-207DK-Z, FBGA-84 | Infineon Technologies AG | HYB18T256161BF-25 vs HYB18T256160AC-3.7 |
| HYB18TC256160BF-3.7 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | HYB18T256161BF-25 vs HYB18TC256160BF-3.7 |
| V59C1256164QALS-37 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, MO-207, FBGA-84 | ProMOS Technologies Inc | HYB18T256161BF-25 vs V59C1256164QALS-37 |
| HYB18TC256160AF-3.7 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Infineon Technologies AG | HYB18T256161BF-25 vs HYB18TC256160AF-3.7 |
| V59C1256164QALF-37 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 | ProMOS Technologies Inc | HYB18T256161BF-25 vs V59C1256164QALF-37 |