There are no models available for this part yet.
Overview of HY5PS561621LF-E4 by SK Hynix Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
CAD Models for HY5PS561621LF-E4 by SK Hynix Inc
Part Data Attributes for HY5PS561621LF-E4 by SK Hynix Inc
|
|
|
|---|---|
|
Pbfree Code
|
No
|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SK HYNIX INC
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|
Part Package Code
|
BGA
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|
Package Description
|
TFBGA, BGA84,9X15,32
|
|
Pin Count
|
84
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|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.24
|
|
Access Mode
|
FOUR BANK PAGE BURST
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|
Access Time-Max
|
0.6 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
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|
Clock Frequency-Max (fCLK)
|
200 MHz
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|
I/O Type
|
COMMON
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Interleaved Burst Length
|
4,8
|
|
JESD-30 Code
|
R-PBGA-B84
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Length
|
14 mm
|
|
Memory Density
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268435456 bit
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Memory IC Type
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DDR2 DRAM
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|
Memory Width
|
16
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Number of Functions
|
1
|
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Number of Ports
|
1
|
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Number of Terminals
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84
|
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Number of Words
|
16777216 words
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|
Number of Words Code
|
16000000
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Operating Mode
|
SYNCHRONOUS
|
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Operating Temperature-Max
|
85 °C
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Operating Temperature-Min
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|
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Organization
|
16MX16
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Output Characteristics
|
3-STATE
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Package Body Material
|
PLASTIC/EPOXY
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Package Code
|
TFBGA
|
|
Package Equivalence Code
|
BGA84,9X15,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
GRID ARRAY, THIN PROFILE, FINE PITCH
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|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
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Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
4,8
|
|
Supply Voltage-Max (Vsup)
|
1.9 V
|
|
Supply Voltage-Min (Vsup)
|
1.7 V
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Supply Voltage-Nom (Vsup)
|
1.8 V
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|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
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Temperature Grade
|
OTHER
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|
Terminal Form
|
BALL
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Terminal Pitch
|
0.8 mm
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Terminal Position
|
BOTTOM
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Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
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Width
|
12 mm
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Alternate Parts for HY5PS561621LF-E4
This table gives cross-reference parts and alternative options found for HY5PS561621LF-E4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5PS561621LF-E4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4N56163QI-ZC220 | DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | HY5PS561621LF-E4 vs K4N56163QI-ZC220 |
| K4T56163QI-ZLF70 | Synchronous DRAM, 16MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | HY5PS561621LF-E4 vs K4T56163QI-ZLF70 |
| HYI18T256160BF-3.7 | DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | HY5PS561621LF-E4 vs HYI18T256160BF-3.7 |
| H5PS2562GFR-G7L | DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, 7.50 X 12.50 MM, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | SK Hynix Inc | HY5PS561621LF-E4 vs H5PS2562GFR-G7L |
| EM68A16CWQB-25H | DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Etron Technology Inc | HY5PS561621LF-E4 vs EM68A16CWQB-25H |
| IS43DR16160A-25EBLI | DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | HY5PS561621LF-E4 vs IS43DR16160A-25EBLI |
| MT47H16M16FG-5E | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 | Micron Technology Inc | HY5PS561621LF-E4 vs MT47H16M16FG-5E |
| V59C1256164QAF-5 | DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, LEAD FREE, MO-207, FBGA-84 | ProMOS Technologies Inc | HY5PS561621LF-E4 vs V59C1256164QAF-5 |
| IS43DR16160A-25EBL | DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | HY5PS561621LF-E4 vs IS43DR16160A-25EBL |
| K4T56163QI-ZCF70 | Synchronous DRAM, 16MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | HY5PS561621LF-E4 vs K4T56163QI-ZCF70 |