Datasheets
HY5DU283222F-26 by: SK Hynix Inc

DDR DRAM, 4MX32, 0.9ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144

Part Details for HY5DU283222F-26 by SK Hynix Inc

Overview of HY5DU283222F-26 by SK Hynix Inc

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Applications Consumer Electronics

Part Details for HY5DU283222F-26

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HY5DU283222F-26 Part Data Attributes

HY5DU283222F-26 SK Hynix Inc
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HY5DU283222F-26 SK Hynix Inc DDR DRAM, 4MX32, 0.9ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code BGA
Package Description TFBGA, BGA144,12X12,32
Pin Count 144
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.9 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 385 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code S-PBGA-B144
Length 12 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA144,12X12,32
Package Shape SQUARE
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.03 A
Supply Current-Max 0.63 mA
Supply Voltage-Max (Vsup) 3.05 V
Supply Voltage-Min (Vsup) 2.76 V
Supply Voltage-Nom (Vsup) 2.9 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 12 mm

Alternate Parts for HY5DU283222F-26

This table gives cross-reference parts and alternative options found for HY5DU283222F-26. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5DU283222F-26, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY5DU283222F-28 DDR DRAM, 4MX32, 0.9ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144 SK Hynix Inc HY5DU283222F-26 vs HY5DU283222F-28
Part Number Description Manufacturer Compare
HY6V22F-45 DDR DRAM, 4MX32, 0.9ns, CMOS, PBGA144, 12 X 12 MM, FBGA-144 SK Hynix Inc HY5DU283222F-26 vs HY6V22F-45
EDD1232AABH-6B-E DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, ROHS COMPLIANT, FBGA-144 Elpida Memory Inc HY5DU283222F-26 vs EDD1232AABH-6B-E
HY5DW283222BF-36 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, MO-205DAE, FBGA-144 SK Hynix Inc HY5DU283222F-26 vs HY5DW283222BF-36
K4D26323AA-GL400 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor HY5DU283222F-26 vs K4D26323AA-GL400
HY5DV283222F-33 DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, FBGA-144 SK Hynix Inc HY5DU283222F-26 vs HY5DV283222F-33
K4D26323QG-GC2A0 DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, FBGA-144 Samsung Semiconductor HY5DU283222F-26 vs K4D26323QG-GC2A0
HY5DU283222AF-2 DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, FBGA-144 SK Hynix Inc HY5DU283222F-26 vs HY5DU283222AF-2
K4D263238E-VC250 DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Samsung Semiconductor HY5DU283222F-26 vs K4D263238E-VC250
EDD1232ACBH-5B-F DDR DRAM, 4MX32, 0.7ns, CMOS, PBGA144, HALOGEN FREE AND ROHS COMPLIANT, FBGA-144 Elpida Memory Inc HY5DU283222F-26 vs EDD1232ACBH-5B-F
HY5DS283222BFP-5 DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144 SK Hynix Inc HY5DU283222F-26 vs HY5DS283222BFP-5

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