Part Details for HY5DU281622ET-30 by SK Hynix Inc
Overview of HY5DU281622ET-30 by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Education and Research
Computing and Data Storage
Part Details for HY5DU281622ET-30
HY5DU281622ET-30 CAD Models
HY5DU281622ET-30 Part Data Attributes
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HY5DU281622ET-30
SK Hynix Inc
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Datasheet
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HY5DU281622ET-30
SK Hynix Inc
DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.225 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.194 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.04 A | |
| Supply Current-Max | 0.47 mA | |
| Supply Voltage-Max (Vsup) | 2.9 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 2.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for HY5DU281622ET-30
This table gives cross-reference parts and alternative options found for HY5DU281622ET-30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5DU281622ET-30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY5DU281622FLTP-D43 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | SK Hynix Inc | HY5DU281622ET-30 vs HY5DU281622FLTP-D43 |
| HYB25D128160CE-5 | DDR DRAM, 8MX16, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Infineon Technologies AG | HY5DU281622ET-30 vs HYB25D128160CE-5 |
| HY5DU281622DLT-H | DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | SK Hynix Inc | HY5DU281622ET-30 vs HY5DU281622DLT-H |
| MT46V8M16TG-6G:D | DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 | Micron Technology Inc | HY5DU281622ET-30 vs MT46V8M16TG-6G:D |
| HY5DV281622DTP-33 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | SK Hynix Inc | HY5DU281622ET-30 vs HY5DV281622DTP-33 |
| K4D261638K-LC50T | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | HY5DU281622ET-30 vs K4D261638K-LC50T |
| HY5DU281622ETP-L | DDR DRAM, 8MX16, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | SK Hynix Inc | HY5DU281622ET-30 vs HY5DU281622ETP-L |
| MT46V8M16TG-75ELIT:A | DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | HY5DU281622ET-30 vs MT46V8M16TG-75ELIT:A |
| MT46V8M16P-75L | DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | HY5DU281622ET-30 vs MT46V8M16P-75L |
| MT46V8M16P-75L:D | DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | HY5DU281622ET-30 vs MT46V8M16P-75L:D |