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Overview of HY57V641620HGLT-55I by SK Hynix Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Education and Research
Computing and Data Storage
CAD Models for HY57V641620HGLT-55I by SK Hynix Inc
Part Data Attributes for HY57V641620HGLT-55I by SK Hynix Inc
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
SK HYNIX INC
|
Part Package Code
|
TSOP2
|
Package Description
|
TSOP2, TSOP54,.46,32
|
Pin Count
|
54
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8542.32.00.02
|
Access Mode
|
FOUR BANK PAGE BURST
|
Access Time-Max
|
5 ns
|
Additional Feature
|
AUTO/SELF REFRESH
|
Clock Frequency-Max (fCLK)
|
182 MHz
|
I/O Type
|
COMMON
|
Interleaved Burst Length
|
1,2,4,8
|
JESD-30 Code
|
R-PDSO-G54
|
JESD-609 Code
|
e6
|
Length
|
22.238 mm
|
Memory Density
|
67108864 bit
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
Memory Width
|
16
|
Number of Functions
|
1
|
Number of Ports
|
1
|
Number of Terminals
|
54
|
Number of Words
|
4194304 words
|
Number of Words Code
|
4000000
|
Operating Mode
|
SYNCHRONOUS
|
Operating Temperature-Max
|
85 °C
|
Operating Temperature-Min
|
-40 °C
|
Organization
|
4MX16
|
Output Characteristics
|
3-STATE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
TSOP2
|
Package Equivalence Code
|
TSOP54,.46,32
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
Qualification Status
|
Not Qualified
|
Refresh Cycles
|
4096
|
Seated Height-Max
|
1.194 mm
|
Self Refresh
|
YES
|
Sequential Burst Length
|
1,2,4,8,FP
|
Standby Current-Max
|
0.002 A
|
Supply Current-Max
|
0.16 mA
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
Supply Voltage-Min (Vsup)
|
3.135 V
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
Surface Mount
|
YES
|
Technology
|
CMOS
|
Temperature Grade
|
INDUSTRIAL
|
Terminal Finish
|
TIN BISMUTH
|
Terminal Form
|
GULL WING
|
Terminal Pitch
|
0.8 mm
|
Terminal Position
|
DUAL
|
Width
|
10.16 mm
|
Alternate Parts for HY57V641620HGLT-55I
This table gives cross-reference parts and alternative options found for HY57V641620HGLT-55I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V641620HGLT-55I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY57V641620HGT-55I | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V641620HGLT-55I vs HY57V641620HGT-55I |
K4S641632K-TP600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V641620HGLT-55I vs K4S641632K-TP600 |
K4S641632E-TL550 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V641620HGLT-55I vs K4S641632E-TL550 |
VG36641641AT-7 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | HY57V641620HGLT-55I vs VG36641641AT-7 |
V54C36516G4VT6 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | HY57V641620HGLT-55I vs V54C36516G4VT6 |
V54C365164VDT5L | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | HY57V641620HGLT-55I vs V54C365164VDT5L |
VG36641642AT-7 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | HY57V641620HGLT-55I vs VG36641642AT-7 |
K4S641632H-UC600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | Samsung Semiconductor | HY57V641620HGLT-55I vs K4S641632H-UC600 |
K4S641632D-TL550 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V641620HGLT-55I vs K4S641632D-TL550 |
HYB39S64160ET-6 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | HY57V641620HGLT-55I vs HYB39S64160ET-6 |