Memory
HY57V561620CTP-8
SK Hynix Inc
Description: Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

Overview of HY57V561620CTP-8 by SK Hynix Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Internet of Things (IoT) Financial Technology (Fintech) Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Electronic Manufacturing Entertainment and Gaming Automotive

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Part Data Attributes for HY57V561620CTP-8 by SK Hynix Inc

HY57V561620CTP-8
SK Hynix Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
TSOP2
Package Description
TSOP2, TSOP54,.46,32
Pin Count
54
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
125 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G54
JESD-609 Code
e6
Length
22.238 mm
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSOP54,.46,32
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.194 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.001 A
Supply Current-Max
0.2 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. HY57V561620CTP-8
    SK Hynix Inc
    Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
    VS

Alternate Parts for HY57V561620CTP-8

This table gives cross-reference parts and alternative options found for HY57V561620CTP-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V561620CTP-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT48LC16M16A1TG-8E Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micron Technology Inc HY57V561620CTP-8 vs MT48LC16M16A1TG-8E
K4S561632C-TP1L Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HY57V561620CTP-8 vs K4S561632C-TP1L
UPD45256163G5-A10-9JF Synchronous DRAM, 16MX16, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics Group HY57V561620CTP-8 vs UPD45256163G5-A10-9JF
HYB39S256160DTL-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Infineon Technologies AG HY57V561620CTP-8 vs HYB39S256160DTL-8
V54C3256164VBUT8PC Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation HY57V561620CTP-8 vs V54C3256164VBUT8PC
V54C3256164VAT-8PC 16MX16 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation HY57V561620CTP-8 vs V54C3256164VAT-8PC
HY57V561620BT-8I Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc HY57V561620CTP-8 vs HY57V561620BT-8I
KM416S16230AT-G/FH Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HY57V561620CTP-8 vs KM416S16230AT-G/FH
HY57V561620T-SI Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc HY57V561620CTP-8 vs HY57V561620T-SI
HYB39S256160DEL-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Infineon Technologies AG HY57V561620CTP-8 vs HYB39S256160DEL-8
Part Number Description Manufacturer Compare
HY57V561620T-S Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc HY57V561620CTP-8 vs HY57V561620T-S
V54C3256164VDE8PC Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54 ProMOS Technologies Inc HY57V561620CTP-8 vs V54C3256164VDE8PC
K4S561632C-TB1L Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HY57V561620CTP-8 vs K4S561632C-TB1L
K4S561632A-TL1L Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HY57V561620CTP-8 vs K4S561632A-TL1L
V54C3256164VAT-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Mosel Vitelic Corporation HY57V561620CTP-8 vs V54C3256164VAT-8
HYB39S256160CEL-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG HY57V561620CTP-8 vs HYB39S256160CEL-8
HYB39S256160DT-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Infineon Technologies AG HY57V561620CTP-8 vs HYB39S256160DT-8
HYB39S256160DF-8 Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG HY57V561620CTP-8 vs HYB39S256160DF-8
HY57V561620BST-S Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc HY57V561620CTP-8 vs HY57V561620BST-S
HY5V56DLF-S Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 13.50 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc HY57V561620CTP-8 vs HY5V56DLF-S

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