Part Details for HY51V65163HGT-45 by SK Hynix Inc
Results Overview of HY51V65163HGT-45 by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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HY51V65163HGT-45 Information
HY51V65163HGT-45 by SK Hynix Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for HY51V65163HGT-45
HY51V65163HGT-45 CAD Models
HY51V65163HGT-45 Part Data Attributes
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HY51V65163HGT-45
SK Hynix Inc
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Datasheet
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HY51V65163HGT-45
SK Hynix Inc
EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SK HYNIX INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE WITH EDO | |
Access Time-Max | 45 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | NO | |
Standby Current-Max | 0.0005 A | |
Supply Current-Max | 0.13 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for HY51V65163HGT-45
This table gives cross-reference parts and alternative options found for HY51V65163HGT-45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY51V65163HGT-45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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KM416V4104BS-45 | Samsung Semiconductor | Check for Price | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | HY51V65163HGT-45 vs KM416V4104BS-45 |
KM416V4104CS-45 | Samsung Semiconductor | Check for Price | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | HY51V65163HGT-45 vs KM416V4104CS-45 |
K4E641612D-TC45 | Samsung Semiconductor | Check for Price | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | HY51V65163HGT-45 vs K4E641612D-TC45 |