Datasheets
HY51V65163HGT-45 by: SK Hynix Inc

EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Part Details for HY51V65163HGT-45 by SK Hynix Inc

Results Overview of HY51V65163HGT-45 by SK Hynix Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

HY51V65163HGT-45 Information

HY51V65163HGT-45 by SK Hynix Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for HY51V65163HGT-45

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HY51V65163HGT-45 Part Data Attributes

HY51V65163HGT-45 SK Hynix Inc
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HY51V65163HGT-45 SK Hynix Inc EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description TSOP2, TSOP50,.46,32
Pin Count 50
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 45 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Length 20.95 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh NO
Standby Current-Max 0.0005 A
Supply Current-Max 0.13 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for HY51V65163HGT-45

This table gives cross-reference parts and alternative options found for HY51V65163HGT-45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY51V65163HGT-45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
KM416V4104BS-45 Samsung Semiconductor Check for Price EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs KM416V4104BS-45
KM416V4104CS-45 Samsung Semiconductor Check for Price EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs KM416V4104CS-45
K4E641612D-TC45 Samsung Semiconductor Check for Price EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs K4E641612D-TC45
Part Number Manufacturer Composite Price Description Compare
MT4LC4M16F5TG-6S Micron Technology Inc Check for Price Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 HY51V65163HGT-45 vs MT4LC4M16F5TG-6S
HYB3164160ATL-60 Infineon Technologies AG Check for Price Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs HYB3164160ATL-60
HYB3166165BT-40 Infineon Technologies AG Check for Price EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs HYB3166165BT-40
K4E641612D-TP45 Samsung Semiconductor Check for Price EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs K4E641612D-TP45
K4F661612C-TC60 Samsung Semiconductor Check for Price Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs K4F661612C-TC60
HYB3165165BTL-60 Infineon Technologies AG Check for Price EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs HYB3165165BTL-60
HY51V65164SLTC-50 SK Hynix Inc Check for Price EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs HY51V65164SLTC-50
HYB3165160AT-40 Siemens Check for Price Fast Page DRAM, 4MX16, 40ns, CMOS, PDSO50 HY51V65163HGT-45 vs HYB3165160AT-40
K4E641612C-TC450 Samsung Semiconductor Check for Price EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs K4E641612C-TC450
KM416V4000C-SL6 Samsung Semiconductor Check for Price Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 HY51V65163HGT-45 vs KM416V4000C-SL6