Datasheets
HWF1686YC by: Hexawave Inc

RF Power Field-Effect Transistor, N-Channel, Metal Semiconductor FET, DIE-4

Part Details for HWF1686YC by Hexawave Inc

Results Overview of HWF1686YC by Hexawave Inc

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HWF1686YC Information

HWF1686YC by Hexawave Inc is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for HWF1686YC

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HWF1686YC Part Data Attributes

HWF1686YC Hexawave Inc
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HWF1686YC Hexawave Inc RF Power Field-Effect Transistor, N-Channel, Metal Semiconductor FET, DIE-4
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Rohs Code No
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer HEXAWAVE INC
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N6
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.40
Drain Current-Max (ID) 0.6 A
FET Technology METAL SEMICONDUCTOR
JESD-30 Code R-XUUC-N6
Moisture Sensitivity Level 1
Number of Terminals 6
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 5.4 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER