Datasheets
HUFA75433S3ST by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 64A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for HUFA75433S3ST by Fairchild Semiconductor Corporation

Results Overview of HUFA75433S3ST by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

HUFA75433S3ST Information

HUFA75433S3ST by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for HUFA75433S3ST

Part # Distributor Description Stock Price Buy
Rochester Electronics 64A, 60V, 0.016ohm, N-Channel MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 520
  • 1 $1.1400
  • 25 $1.1200
  • 100 $1.0700
  • 500 $1.0300
  • 1,000 $0.9690
$0.9690 / $1.1400 Buy Now

Part Details for HUFA75433S3ST

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HUFA75433S3ST Part Data Attributes

HUFA75433S3ST Fairchild Semiconductor Corporation
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HUFA75433S3ST Fairchild Semiconductor Corporation Power Field-Effect Transistor, 64A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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