Part Details for HUF76409D3S by Fairchild Semiconductor Corporation
Overview of HUF76409D3S by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF76409D3S
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 17 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 602 |
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$0.5625 / $1.3500 | Buy Now |
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Chip1Cloud | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | 18000 |
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RFQ |
Part Details for HUF76409D3S
HUF76409D3S CAD Models
HUF76409D3S Part Data Attributes
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HUF76409D3S
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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HUF76409D3S
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 49 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HUF76409D3S
This table gives cross-reference parts and alternative options found for HUF76409D3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76409D3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ71L | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | HUF76409D3S vs BUZ71L |
HUF76429D3ST | Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | HUF76409D3S vs HUF76429D3ST |
HUF75309P3 | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | HUF76409D3S vs HUF75309P3 |
NTD18N06T4G | Power MOSFET 60V 18A 60 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | HUF76409D3S vs NTD18N06T4G |
IRF9Z34NPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | HUF76409D3S vs IRF9Z34NPBF |
BUZ71L | 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | HUF76409D3S vs BUZ71L |
BUZ71S2 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | HUF76409D3S vs BUZ71S2 |
FQB20N06L | Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | HUF76409D3S vs FQB20N06L |
FQD24N08TF | Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | HUF76409D3S vs FQD24N08TF |
HUF76423D3ST | Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | HUF76409D3S vs HUF76423D3ST |