Datasheets
HUF76139S3STK by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for HUF76139S3STK by Fairchild Semiconductor Corporation

Results Overview of HUF76139S3STK by Fairchild Semiconductor Corporation

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HUF76139S3STK Information

HUF76139S3STK by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for HUF76139S3STK

Part # Distributor Description Stock Price Buy
DISTI # 2156-HUF76139S3STK-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 606 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 24000
In Stock
  • 606 $0.5000
$0.5000 Buy Now
Rochester Electronics 75A, 30V, 0.01ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Not Compliant pbFree: No Status: Obsolete Min Qty: 1 24000
  • 1 $0.4767
  • 25 $0.4672
  • 100 $0.4481
  • 500 $0.4290
  • 1,000 $0.4052
$0.4052 / $0.4767 Buy Now

Part Details for HUF76139S3STK

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HUF76139S3STK Part Data Attributes

HUF76139S3STK Fairchild Semiconductor Corporation
Buy Now Datasheet
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HUF76139S3STK Fairchild Semiconductor Corporation Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

HUF76139S3STK Frequently Asked Questions (FAQ)

  • Fairchild recommends a 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer to minimize thermal resistance. A minimum of 2 oz copper thickness is recommended for the PCB.

  • To ensure reliable operation in high-temperature environments, Fairchild recommends derating the device's power dissipation according to the thermal derating curve provided in the datasheet. Additionally, ensure good thermal conduction between the device and the heat sink or PCB.

  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage within the recommended operating range of 4.5V to 5.5V.

  • Fairchild recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input pins to protect against electrostatic discharge. Additionally, follow proper handling and storage procedures to prevent ESD damage.

  • Fairchild recommends a soldering temperature of 260°C (500°F) and a soldering time of 10 seconds or less to prevent damage to the device. Use a soldering iron with a temperature-controlled tip to ensure accurate temperature control.