Datasheets
HUF75829D3S by:

18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Details for HUF75829D3S by Rochester Electronics LLC

Overview of HUF75829D3S by Rochester Electronics LLC

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Part Details for HUF75829D3S

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HUF75829D3S Part Data Attributes

HUF75829D3S Rochester Electronics LLC
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HUF75829D3S Rochester Electronics LLC 18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75829D3S

This table gives cross-reference parts and alternative options found for HUF75829D3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75829D3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75829D3S 18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75829D3S vs HUF75829D3S
HUF75829D3ST Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75829D3S vs HUF75829D3ST
HUF75829D3S Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75829D3S vs HUF75829D3S
Part Number Description Manufacturer Compare
HUF75829D3ST Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75829D3S vs HUF75829D3ST
HUF75829D3S 18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75829D3S vs HUF75829D3S
FDD120AN15A0 N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ, DPAK-3 / TO-252-3, 2500-REEL onsemi HUF75829D3S vs FDD120AN15A0
FDD120AN15A0_NL Power Field-Effect Transistor, 14A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75829D3S vs FDD120AN15A0_NL
HUF75829D3ST 18A, 150V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75829D3S vs HUF75829D3ST
HUF75829D3S Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75829D3S vs HUF75829D3S

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