Datasheets
HUF75639S3S by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Harris Semiconductor
Intersil Corporation
onsemi
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for HUF75639S3S by Fairchild Semiconductor Corporation

Overview of HUF75639S3S by Fairchild Semiconductor Corporation

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Price & Stock for HUF75639S3S

Part # Distributor Description Stock Price Buy
Bristol Electronics   7900
RFQ
Bristol Electronics   343
RFQ
Rochester Electronics 56A, 100V, 0.025ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 20586
  • 1 $1.4300
  • 25 $1.4000
  • 100 $1.3400
  • 500 $1.2900
  • 1,000 $1.2200
$1.2200 / $1.4300 Buy Now

Part Details for HUF75639S3S

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HUF75639S3S Part Data Attributes

HUF75639S3S Fairchild Semiconductor Corporation
Buy Now Datasheet
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HUF75639S3S Fairchild Semiconductor Corporation Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75639S3S

This table gives cross-reference parts and alternative options found for HUF75639S3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75639S3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
HUF75639S3ST Intersil Corporation Check for Price 53A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB HUF75639S3S vs HUF75639S3ST
HUF75639S3S Intersil Corporation Check for Price 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB HUF75639S3S vs HUF75639S3S
HUF75639S3ST_NL Rochester Electronics LLC Check for Price 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB HUF75639S3S vs HUF75639S3ST_NL
HUF75639S3S Rochester Electronics LLC Check for Price 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB HUF75639S3S vs HUF75639S3S
HUF75639S3ST Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB HUF75639S3S vs HUF75639S3ST
HUF75639S3ST Rochester Electronics LLC Check for Price 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB HUF75639S3S vs HUF75639S3ST

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