Part Details for HUF75639S3S by Fairchild Semiconductor Corporation
Results Overview of HUF75639S3S by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
HUF75639S3S Information
HUF75639S3S by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for HUF75639S3S
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 7900 |
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RFQ | ||
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Bristol Electronics | 343 |
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RFQ | ||
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Rochester Electronics | 56A, 100V, 0.025ohm, N-Channel Power MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 20586 |
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$1.2200 / $1.4300 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for HUF75639S3S
HUF75639S3S CAD Models
HUF75639S3S Part Data Attributes
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HUF75639S3S
Fairchild Semiconductor Corporation
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Datasheet
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HUF75639S3S
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HUF75639S3S
This table gives cross-reference parts and alternative options found for HUF75639S3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75639S3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HUF75639S3ST | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 53A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | HUF75639S3S vs HUF75639S3ST |
| HUF75639S3ST | Rochester Electronics LLC | Check for Price | 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | HUF75639S3S vs HUF75639S3ST |
| HUF75639S3S | Intersil Corporation | Check for Price | 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | HUF75639S3S vs HUF75639S3S |
| HUF75639S3S | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 53A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | HUF75639S3S vs HUF75639S3S |
| HUF75639S3ST | onsemi | $1.8929 | N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ, D2PAK-3 / TO-263-2, 800-REEL | HUF75639S3S vs HUF75639S3ST |
| HUF75639S3ST_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | HUF75639S3S vs HUF75639S3ST_NL |
| HUF75639S3S | Rochester Electronics LLC | Check for Price | 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | HUF75639S3S vs HUF75639S3S |
| HUF75639S3ST | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | HUF75639S3S vs HUF75639S3ST |