Datasheets
HUF75531SK8T by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Intersil Corporation
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

Part Details for HUF75531SK8T by Fairchild Semiconductor Corporation

Results Overview of HUF75531SK8T by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

HUF75531SK8T Information

HUF75531SK8T by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for HUF75531SK8T

Part # Distributor Description Stock Price Buy
ComSIT USA Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem... iconductor FET, MS-012AA , ECCN: EAR99 more RoHS: Compliant Stock DE - 495
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for HUF75531SK8T

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HUF75531SK8T Part Data Attributes

HUF75531SK8T Fairchild Semiconductor Corporation
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HUF75531SK8T Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75531SK8T

This table gives cross-reference parts and alternative options found for HUF75531SK8T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75531SK8T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
HUF75531SK8T Intersil Corporation Check for Price 6A, 80V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8 HUF75531SK8T vs HUF75531SK8T
Part Number Manufacturer Composite Price Description Compare
HUF75531SK8 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HUF75531SK8T vs HUF75531SK8
HUF75531SK8T Rochester Electronics LLC Check for Price 6A, 80V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA HUF75531SK8T vs HUF75531SK8T

HUF75531SK8T Related Parts

HUF75531SK8T Frequently Asked Questions (FAQ)

  • The thermal resistance of the HUF75531SK8T is typically around 1.5°C/W (junction-to-ambient) and 0.5°C/W (junction-to-case). However, this value can vary depending on the specific application and cooling conditions.

  • The HUF75531SK8T is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability. Consult the datasheet for specific derating curves.

  • To ensure proper biasing, follow the recommended biasing scheme in the datasheet, which typically includes a voltage regulator, resistors, and capacitors. Additionally, ensure that the input voltage is within the recommended range and that the device is properly decoupled.

  • The maximum SOA for the HUF75531SK8T is typically defined by the voltage and current ratings. Consult the datasheet for specific SOA curves, which provide guidance on safe operating conditions.

  • The HUF75531SK8T is designed for high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application is within the recommended frequency range.