Datasheets
HUF75531SK8 by:

Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

Part Details for HUF75531SK8 by Fairchild Semiconductor Corporation

Overview of HUF75531SK8 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HUF75531SK8

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET N-CH 80V 6A 8-SOP 9600
RFQ

Part Details for HUF75531SK8

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HUF75531SK8 Part Data Attributes:

HUF75531SK8 Fairchild Semiconductor Corporation
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HUF75531SK8 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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