Datasheets
HUF75344P3 by:

N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL

Part Details for HUF75344P3 by Fairchild Semiconductor Corporation

Overview of HUF75344P3 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for HUF75344P3

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 55V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 1784
  • 1 $4.0000
  • 325 $1.6500
  • 607 $1.5000
$1.5000 / $4.0000 Buy Now
Chip1Cloud MOSFET N-CH 55V 75A TO-220AB 1010
RFQ

Part Details for HUF75344P3

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HUF75344P3 Part Data Attributes:

HUF75344P3 Fairchild Semiconductor Corporation
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HUF75344P3 Fairchild Semiconductor Corporation N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description TO-220AB, 3 PIN
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 285 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75344P3

This table gives cross-reference parts and alternative options found for HUF75344P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75344P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRF3205 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier HUF75344P3 vs AUIRF3205
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HUF75344P3 vs IRF3205
IRF3205HR Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier HUF75344P3 vs IRF3205HR
HUF75344P3 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor HUF75344P3 vs HUF75344P3
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HUF75344P3 vs IRF3205VPBF
HUF75344P3 N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, 800-TUBE onsemi HUF75344P3 vs HUF75344P3
IRF3205PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HUF75344P3 vs IRF3205PBF
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier HUF75344P3 vs IRF3205
AUIRF3205 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Infineon Technologies AG HUF75344P3 vs AUIRF3205
Part Number Description Manufacturer Compare
HUF75344P3 N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, 800-TUBE onsemi HUF75344P3 vs HUF75344P3
AUIRF3205 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier HUF75344P3 vs AUIRF3205
AUIRF3205Z Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG HUF75344P3 vs AUIRF3205Z
HUFA75345P3 Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation HUF75344P3 vs HUFA75345P3
HUF75339P3 N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ, 800-TUBE onsemi HUF75344P3 vs HUF75339P3
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HUF75344P3 vs IRF3205
HUF75345P3 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ, 800-TUBE onsemi HUF75344P3 vs HUF75345P3
HUF75345P3 Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation HUF75344P3 vs HUF75345P3
IRF3205PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HUF75344P3 vs IRF3205PBF
IRF3205ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HUF75344P3 vs IRF3205ZPBF

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