Datasheets
HUF75337S3S by:

75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Details for HUF75337S3S by Intersil Corporation

Overview of HUF75337S3S by Intersil Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for HUF75337S3S

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HUF75337S3S Part Data Attributes

HUF75337S3S Intersil Corporation
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HUF75337S3S Intersil Corporation 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75337S3S

This table gives cross-reference parts and alternative options found for HUF75337S3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75337S3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75337S3S Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75337S3S vs HUF75337S3S
HUF75337S3S Power Field-Effect Transistor, 62A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 Harris Semiconductor HUF75337S3S vs HUF75337S3S
Part Number Description Manufacturer Compare
HUF75337S3S Power Field-Effect Transistor, 62A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 Harris Semiconductor HUF75337S3S vs HUF75337S3S
HUF75337S3S 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC HUF75337S3S vs HUF75337S3S
HUF75337S3S Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75337S3S vs HUF75337S3S

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