Datasheets
HUF75332G3 by:
Harris Semiconductor
Fairchild Semiconductor Corporation
Harris Semiconductor
Intersil Corporation
Not Found

Power Field-Effect Transistor, 52A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for HUF75332G3 by Harris Semiconductor

Results Overview of HUF75332G3 by Harris Semiconductor

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HUF75332G3 Information

HUF75332G3 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for HUF75332G3

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HUF75332G3 Part Data Attributes

HUF75332G3 Harris Semiconductor
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HUF75332G3 Harris Semiconductor Power Field-Effect Transistor, 52A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 110 W
Power Dissipation-Max (Abs) 110 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 55 ns
Turn-on Time-Max (ton) 100 ns