Datasheets
HUF75329D3 by:

Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,

Part Details for HUF75329D3 by Fairchild Semiconductor Corporation

Overview of HUF75329D3 by Fairchild Semiconductor Corporation

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Price & Stock for HUF75329D3

Part # Distributor Description Stock Price Buy
Rochester Electronics 20A, 55V, 0.026ohm, N-Channel Power MOSFET, TO-251AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 1792
  • 1 $0.6711
  • 25 $0.6577
  • 100 $0.6308
  • 500 $0.6040
  • 1,000 $0.5704
$0.5704 / $0.6711 Buy Now

Part Details for HUF75329D3

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HUF75329D3 Part Data Attributes

HUF75329D3 Fairchild Semiconductor Corporation
Buy Now Datasheet
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HUF75329D3 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 128 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75329D3

This table gives cross-reference parts and alternative options found for HUF75329D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75329D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75329D3 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Rochester Electronics LLC HUF75329D3 vs HUF75329D3
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens HUF75329D3 vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75329D3 vs HUF76429D3ST
HUF75309P3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation HUF75329D3 vs HUF75309P3
NTD18N06T4G Power MOSFET 60V 18A 60 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi HUF75329D3 vs NTD18N06T4G
IRF9Z34NPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG HUF75329D3 vs IRF9Z34NPBF
BUZ71L 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC HUF75329D3 vs BUZ71L
BUZ71S2 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens HUF75329D3 vs BUZ71S2
FQB20N06L Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation HUF75329D3 vs FQB20N06L
FQD24N08TF Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation HUF75329D3 vs FQD24N08TF
HUF76423D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation HUF75329D3 vs HUF76423D3ST

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