Datasheets
HTT1213E by:

2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 1.20 X 0.80 MM, 0.50 MM HEIGHT, SMD, EMFPAK-6

Part Details for HTT1213E by Renesas Electronics Corporation

Overview of HTT1213E by Renesas Electronics Corporation

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

Part Details for HTT1213E

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HTT1213E Part Data Attributes

HTT1213E Renesas Electronics Corporation
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HTT1213E Renesas Electronics Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 1.20 X 0.80 MM, 0.50 MM HEIGHT, SMD, EMFPAK-6
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Package Description 1.20 X 0.80 MM, 0.50 MM HEIGHT, SMD, EMFPAK-6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.05 A
Collector-Base Capacitance-Max 0.45 pF
Collector-Emitter Voltage-Max 4 V
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 100
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-F6
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 12000 MHz

Alternate Parts for HTT1213E

This table gives cross-reference parts and alternative options found for HTT1213E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HTT1213E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HTT1213E RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, EMFPAK-6 Hitachi Ltd HTT1213E vs HTT1213E

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