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Power Field-Effect Transistor, 7A I(D), 30V, 0.0291ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSML3030L10, 8 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
HS8K11TB
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R - Tape and Reel (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
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$0.2061 / $0.2351 | Buy Now |
DISTI #
755-HS8K11TB
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Mouser Electronics | MOSFET 30V Nch+Nch Power MOSFET RoHS: Compliant | 680 |
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$0.2030 / $0.6100 | Buy Now |
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Future Electronics | MOSFET 30V Nch+Nch Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2020 | Buy Now |
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Quest Components | 2349 |
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$0.4988 / $1.4250 | Buy Now | |
DISTI #
HS8K11TB
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R - Tape and Reel (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
|
$0.2061 / $0.2351 | Buy Now |
DISTI #
HS8K11TB
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TME | Transistor: N-MOSFET x2, unipolar, 30V, 7/11A, Idm: 28÷44A, 2W Min Qty: 1 | 0 |
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$0.2870 / $0.8580 | RFQ |
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Ameya Holding Limited | MOSFET 2N-CH 30V 7A/11A HSML Min Qty: 1 | 75-Authorized Distributor |
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$0.2826 / $0.4804 | Buy Now |
DISTI #
HS8K11TB
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Avnet Asia | Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 15000 |
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$0.4753 / $0.5356 | Buy Now |
DISTI #
HS8K11TB
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Avnet Silica | Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 2 Days | Silica - 0 |
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Buy Now | |
DISTI #
4202938RL
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Farnell | MOSFET, DUAL, N-CH, 150 DEG C RoHS: Compliant Min Qty: 3000 Lead time: 23 Weeks, 1 Days Container: Reel | 0 |
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$0.3239 | Buy Now |
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HS8K11TB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
HS8K11TB
ROHM Semiconductor
Power Field-Effect Transistor, 7A I(D), 30V, 0.0291ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSML3030L10, 8 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, HSML3030L10, 8 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 21 Weeks | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 3.6 mJ | |
Case Connection | DRAIN SOURCE | |
Configuration | COMPLEX | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.0291 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |