Datasheets
HS8K11TB by:

Power Field-Effect Transistor, 7A I(D), 30V, 0.0291ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSML3030L10, 8 PIN

Part Details for HS8K11TB by ROHM Semiconductor

Overview of HS8K11TB by ROHM Semiconductor

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Price & Stock for HS8K11TB

Part # Distributor Description Stock Price Buy
DISTI # HS8K11TB
Avnet Americas Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R - Tape and Reel (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2351
  • 6,000 $0.2286
  • 12,000 $0.2222
  • 18,000 $0.2157
  • 24,000 $0.2093
  • 30,000 $0.2061
$0.2061 / $0.2351 Buy Now
DISTI # 755-HS8K11TB
Mouser Electronics MOSFET 30V Nch+Nch Power MOSFET RoHS: Compliant 680
  • 1 $0.6100
  • 10 $0.5370
  • 100 $0.3870
  • 500 $0.3150
  • 1,000 $0.2610
  • 3,000 $0.2350
  • 6,000 $0.2190
  • 9,000 $0.2110
  • 24,000 $0.2030
$0.2030 / $0.6100 Buy Now
Future Electronics MOSFET 30V Nch+Nch Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2020
$0.2020 Buy Now
Quest Components   2349
  • 1 $1.4250
  • 282 $0.5700
  • 1,405 $0.4988
$0.4988 / $1.4250 Buy Now
DISTI # HS8K11TB
Avnet Americas Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R - Tape and Reel (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2351
  • 6,000 $0.2286
  • 12,000 $0.2222
  • 18,000 $0.2157
  • 24,000 $0.2093
  • 30,000 $0.2061
$0.2061 / $0.2351 Buy Now
DISTI # HS8K11TB
TME Transistor: N-MOSFET x2, unipolar, 30V, 7/11A, Idm: 28÷44A, 2W Min Qty: 1 0
  • 1 $0.8580
  • 5 $0.4020
  • 25 $0.3620
  • 100 $0.3200
  • 500 $0.2870
$0.2870 / $0.8580 RFQ
Ameya Holding Limited MOSFET 2N-CH 30V 7A/11A HSML Min Qty: 1 75-Authorized Distributor
  • 1 $0.4804
  • 10 $0.4522
  • 25 $0.4239
  • 100 $0.3956
  • 250 $0.3674
  • 500 $0.3391
  • 1,000 $0.3109
  • 3,000 $0.2826
$0.2826 / $0.4804 Buy Now
DISTI # HS8K11TB
Avnet Asia Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 15000
  • 3,000 $0.5356
  • 6,000 $0.5281
  • 9,000 $0.5209
  • 15,000 $0.5139
  • 30,000 $0.5003
  • 75,000 $0.4875
  • 150,000 $0.4753
$0.4753 / $0.5356 Buy Now
DISTI # HS8K11TB
Avnet Silica Transistor MOSFET Array Dual N-CH 30V 7A/11A 10-Pin HSML3030 Emboss T/R (Alt: HS8K11TB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 2 Days Silica - 0
Buy Now
DISTI # 4202938RL
Farnell MOSFET, DUAL, N-CH, 150 DEG C RoHS: Compliant Min Qty: 3000 Lead time: 23 Weeks, 1 Days Container: Reel 0
  • 3,000 $0.3239
$0.3239 Buy Now
DISTI # 4202938
Farnell MOSFET, DUAL, N-CH, 150 DEG C RoHS: Compliant Min Qty: 3000 Lead time: 23 Weeks, 1 Days Container: Cut Tape 0
  • 3,000 $0.3239
$0.3239 Buy Now

Part Details for HS8K11TB

HS8K11TB CAD Models

HS8K11TB Part Data Attributes:

HS8K11TB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
HS8K11TB ROHM Semiconductor Power Field-Effect Transistor, 7A I(D), 30V, 0.0291ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSML3030L10, 8 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description HALOGEN FREE AND ROHS COMPLIANT, HSML3030L10, 8 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 3.6 mJ
Case Connection DRAIN SOURCE
Configuration COMPLEX
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.0291 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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