There are no models available for this part yet.
Overview of HN58V1001P-25 by Hitachi Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Price & Stock for HN58V1001P-25 by Hitachi Ltd
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | Min Qty: 1 | 15 |
|
$21.0600 | Buy Now | ||
| Quest Components | 12 |
|
$22.8150 | Buy Now |
CAD Models for HN58V1001P-25 by Hitachi Ltd
Part Data Attributes for HN58V1001P-25 by Hitachi Ltd
|
|
|
|---|---|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
HITACHI LTD
|
|
Part Package Code
|
DIP
|
|
Package Description
|
DIP, DIP32,.6
|
|
Pin Count
|
32
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.51
|
|
Access Time-Max
|
250 ns
|
|
Additional Feature
|
10000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION; 128 BYTE PAGE WRITE
|
|
Command User Interface
|
NO
|
|
Data Polling
|
YES
|
|
Data Retention Time-Min
|
10
|
|
JESD-30 Code
|
R-PDIP-T32
|
|
Length
|
41.9 mm
|
|
Memory Density
|
1048576 bit
|
|
Memory IC Type
|
EEPROM
|
|
Memory Width
|
8
|
|
Number of Functions
|
1
|
|
Number of Terminals
|
32
|
|
Number of Words
|
131072 words
|
|
Number of Words Code
|
128000
|
|
Operating Mode
|
ASYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
128KX8
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
DIP
|
|
Package Equivalence Code
|
DIP32,.6
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Page Size
|
128 words
|
|
Parallel/Serial
|
PARALLEL
|
|
Programming Voltage
|
3 V
|
|
Qualification Status
|
Not Qualified
|
|
Ready/Busy
|
YES
|
|
Seated Height-Max
|
5.08 mm
|
|
Standby Current-Max
|
0.00002 A
|
|
Supply Current-Max
|
0.015 mA
|
|
Supply Voltage-Max (Vsup)
|
5.5 V
|
|
Supply Voltage-Min (Vsup)
|
2.7 V
|
|
Supply Voltage-Nom (Vsup)
|
3 V
|
|
Surface Mount
|
NO
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Pitch
|
2.54 mm
|
|
Terminal Position
|
DUAL
|
|
Toggle Bit
|
YES
|
|
Width
|
15.24 mm
|
|
Write Cycle Time-Max (tWC)
|
15 ms
|
Alternate Parts for HN58V1001P-25
This table gives cross-reference parts and alternative options found for HN58V1001P-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HN58V1001P-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 28LV010RT1DI-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Data Device Corporation | HN58V1001P-25 vs 28LV010RT1DI-25 |
| 28LV010RT4DE-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Maxwell Technologies | HN58V1001P-25 vs 28LV010RT4DE-25 |
| 28LV010RPDE-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Maxwell Technologies | HN58V1001P-25 vs 28LV010RPDE-25 |
| 28LV010RT1DS-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Maxwell Technologies | HN58V1001P-25 vs 28LV010RT1DS-25 |
| AT28LV010-25PI | EEPROM, 128KX8, 250ns, Parallel, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | Atmel Corporation | HN58V1001P-25 vs AT28LV010-25PI |
| AT28LV010-25PJ | EEPROM, 128KX8, 250ns, Parallel, CMOS, PDIP32 | Microchip Technology Inc | HN58V1001P-25 vs AT28LV010-25PJ |
| 28LV010RT2DE-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Maxwell Technologies | HN58V1001P-25 vs 28LV010RT2DE-25 |
| 28LV010RPDB-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Maxwell Technologies | HN58V1001P-25 vs 28LV010RPDB-25 |
| 28LV010RPDE-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Data Device Corporation | HN58V1001P-25 vs 28LV010RPDE-25 |
| 28LV010RPDS-25 | EEPROM, 128KX8, 250ns, Parallel, CMOS, DIP-32 | Maxwell Technologies | HN58V1001P-25 vs 28LV010RPDS-25 |