Part Details for HN1C01FGRTE85R by Toshiba America Electronic Components
Results Overview of HN1C01FGRTE85R by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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HN1C01FGRTE85R Information
HN1C01FGRTE85R by Toshiba America Electronic Components is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for HN1C01FGRTE85R
HN1C01FGRTE85R CAD Models
HN1C01FGRTE85R Part Data Attributes
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HN1C01FGRTE85R
Toshiba America Electronic Components
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Datasheet
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HN1C01FGRTE85R
Toshiba America Electronic Components
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Collector Current-Max (IC) | 0.15 A | |
| Collector-Base Capacitance-Max | 3.5 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DC Current Gain-Min (hFE) | 200 | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.3 W | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 80 MHz | |
| VCEsat-Max | 0.25 V |
Alternate Parts for HN1C01FGRTE85R
This table gives cross-reference parts and alternative options found for HN1C01FGRTE85R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HN1C01FGRTE85R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| KTC811U-GR | KEC | Check for Price | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SUPER MINIMOLD, US6, 6 PIN | HN1C01FGRTE85R vs KTC811U-GR |
| KTC801F-GR | KEC | Check for Price | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SUPERMINI, TFS6, 6 PIN | HN1C01FGRTE85R vs KTC801F-GR |
| HN1C01F-GR(5LMBS,F | Toshiba America Electronic Components | Check for Price | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | HN1C01FGRTE85R vs HN1C01F-GR(5LMBS,F |
| KTC812E-GR | KEC | Check for Price | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SUPER MINIMOLD, TES6, 6 PIN | HN1C01FGRTE85R vs KTC812E-GR |
| HN1C01FUGRTE85L | Toshiba America Electronic Components | Check for Price | TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | HN1C01FGRTE85R vs HN1C01FUGRTE85L |
| HN1C01FGRTE85N | Toshiba America Electronic Components | Check for Price | TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | HN1C01FGRTE85R vs HN1C01FGRTE85N |
| HN1C01F | Toshiba America Electronic Components | Check for Price | TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal | HN1C01FGRTE85R vs HN1C01F |
| HN1C01FU-GR(5LMA,F | Toshiba America Electronic Components | Check for Price | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | HN1C01FGRTE85R vs HN1C01FU-GR(5LMA,F |
| HN2C01FU-GR(T5LFUF | Toshiba America Electronic Components | Check for Price | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | HN1C01FGRTE85R vs HN2C01FU-GR(T5LFUF |
| KTC811E-GR | KEC | Check for Price | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, TES6, 6 PIN | HN1C01FGRTE85R vs KTC811E-GR |