Part Details for HM66AEB18202BP-40 by Renesas Electronics Corporation
Overview of HM66AEB18202BP-40 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HM66AEB18202BP-40
HM66AEB18202BP-40 CAD Models
HM66AEB18202BP-40 Part Data Attributes
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HM66AEB18202BP-40
Renesas Electronics Corporation
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Datasheet
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HM66AEB18202BP-40
Renesas Electronics Corporation
2MX18 DDR SRAM, 0.45ns, PBGA165, PLASTIC, FBGA-165
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | BGA | |
| Package Description | PLASTIC, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 17 mm | |
| Memory Density | 37748736 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 18 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.46 mm | |
| Standby Current-Max | 0.3 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.63 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 15 mm |
Alternate Parts for HM66AEB18202BP-40
This table gives cross-reference parts and alternative options found for HM66AEB18202BP-40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HM66AEB18202BP-40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1418BV18-200BZC | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | HM66AEB18202BP-40 vs CY7C1418BV18-200BZC |
| CY7C1418KV18-250BZXI | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | Infineon Technologies AG | HM66AEB18202BP-40 vs CY7C1418KV18-250BZXI |
| CY7C1418KV18-250BZCT | Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | HM66AEB18202BP-40 vs CY7C1418KV18-250BZCT |
| GS8342T18AE-200 | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | HM66AEB18202BP-40 vs GS8342T18AE-200 |
| CY7C1418KV18-250BZC | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | HM66AEB18202BP-40 vs CY7C1418KV18-250BZC |
| CY7C1418BV18-250BZC | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | HM66AEB18202BP-40 vs CY7C1418BV18-250BZC |
| GS8342T18AE-250I | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | HM66AEB18202BP-40 vs GS8342T18AE-250I |
| CY7C1418KV18-250BZI | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | HM66AEB18202BP-40 vs CY7C1418KV18-250BZI |
| GS8342T18AGE-250I | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | HM66AEB18202BP-40 vs GS8342T18AGE-250I |
| K7I321882M-FC200 | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | HM66AEB18202BP-40 vs K7I321882M-FC200 |