Datasheets
HM514100BS-8 by: Hitachi Ltd

Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-20

Part Details for HM514100BS-8 by Hitachi Ltd

Results Overview of HM514100BS-8 by Hitachi Ltd

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Applications Consumer Electronics Computing and Data Storage

HM514100BS-8 Information

HM514100BS-8 by Hitachi Ltd is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for HM514100BS-8

Part # Distributor Description Stock Price Buy
Bristol Electronics   78
RFQ

Part Details for HM514100BS-8

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HM514100BS-8 Part Data Attributes

HM514100BS-8 Hitachi Ltd
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HM514100BS-8 Hitachi Ltd Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-20
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HITACHI LTD
Part Package Code SOJ
Package Description 0.300 INCH, PLASTIC, SOJ-20
Pin Count 20
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 80 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type SEPARATE
JESD-30 Code R-PDSO-J20
JESD-609 Code e0
Length 16.9 mm
Memory Density 4194304 bit
Memory IC Type FAST PAGE DRAM
Memory Width 1
Number of Functions 1
Number of Ports 1
Number of Terminals 20
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX1
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Equivalence Code SOJ20/26,.34
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 1024
Seated Height-Max 3.76 mm
Self Refresh NO
Standby Current-Max 0.001 A
Supply Current-Max 0.09 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL
Width 7.62 mm

Alternate Parts for HM514100BS-8

This table gives cross-reference parts and alternative options found for HM514100BS-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HM514100BS-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MCM44100BN80R2 Motorola Mobility LLC Check for Price 4MX1 FAST PAGE DRAM, 80ns, PDSO20, 0.300 INCH, SOJ-26/20 HM514100BS-8 vs MCM44100BN80R2
MCM44100N80 Motorola Mobility LLC Check for Price 4MX1 FAST PAGE DRAM, 80ns, PDSO20, 0.300 INCH, SOJ-20 HM514100BS-8 vs MCM44100N80
KM41C4000CJ-8 Samsung Semiconductor Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 HM514100BS-8 vs KM41C4000CJ-8
MCM44100BN80R2 Motorola Semiconductor Products Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20 HM514100BS-8 vs MCM44100BN80R2
TC514100ASJ-80 Toshiba America Electronic Components Check for Price IC 4M X 1 FAST PAGE DRAM, 80 ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20, Dynamic RAM HM514100BS-8 vs TC514100ASJ-80
MCM54100AN80R2 Motorola Semiconductor Products Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20 HM514100BS-8 vs MCM54100AN80R2
HYB514100AJ-80 Infineon Technologies AG Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, HM514100BS-8 vs HYB514100AJ-80
MCM44100BN80 Motorola Semiconductor Products Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20 HM514100BS-8 vs MCM44100BN80
PE21040-08 Intel Corporation Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 HM514100BS-8 vs PE21040-08
Part Number Manufacturer Composite Price Description Compare
GM71C4100BJ-80 LG Semicon Co Ltd Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, HM514100BS-8 vs GM71C4100BJ-80
MCM54102AN70R2 Motorola Mobility LLC Check for Price 4MX1 STATIC COLUMN DRAM, 70ns, PDSO20, 0.300 INCH, SOJ-20 HM514100BS-8 vs MCM54102AN70R2
KM41C4000CJ-L5 Samsung Semiconductor Check for Price Fast Page DRAM, 4MX1, 50ns, CMOS, PDSO20, SOJ-20 HM514100BS-8 vs KM41C4000CJ-L5
UPD424100ALA-60 NEC Electronics America Inc Check for Price Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 HM514100BS-8 vs UPD424100ALA-60
MSM51V4100-10SJ OKI Electric Industry Co Ltd Check for Price Fast Page DRAM, 4MX1, 100ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 HM514100BS-8 vs MSM51V4100-10SJ
KM41C4000CJ-6 Samsung Semiconductor Check for Price Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, SOJ-20 HM514100BS-8 vs KM41C4000CJ-6
MCM4L4100N80 Motorola Semiconductor Products Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, SOJ-20 HM514100BS-8 vs MCM4L4100N80
M5M44102AWJ-10T Mitsubishi Electric Check for Price Static Column DRAM, 4MX1, 100ns, CMOS, PDSO20, 0.350 INCH, PLASTIC, SOJ-26/20 HM514100BS-8 vs M5M44102AWJ-10T
M5M44100AJ-8LT Mitsubishi Electric Check for Price Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 HM514100BS-8 vs M5M44100AJ-8LT
M5M44100BJ-7ST Mitsubishi Electric Check for Price Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 HM514100BS-8 vs M5M44100BJ-7ST

HM514100BS-8 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the HM514100BS-8 is 0°C to 70°C, with a storage temperature range of -40°C to 85°C.

  • To prevent damage during soldering, it's recommended to use a soldering iron with a temperature of 260°C or less, and to avoid applying excessive force or pressure to the device. Additionally, the device should be handled by the edges to prevent electrostatic discharge (ESD) damage.

  • The maximum allowable voltage for the HM514100BS-8 is 3.6V, with a recommended operating voltage of 3.3V ± 0.3V.

  • To ensure data integrity during power-on and power-off sequences, it's recommended to follow a controlled power-on and power-off sequence, with a minimum power-on ramp time of 1ms and a maximum power-off time of 10ms. Additionally, the device should be powered on and off in a monotonic sequence to prevent data corruption.

  • The recommended layout and routing for the HM514100BS-8 involves keeping the device away from noise sources, using a solid ground plane, and minimizing signal trace lengths and impedance. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.