Part Details for HGTP7N60A4 by Fairchild Semiconductor Corporation
Overview of HGTP7N60A4 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTP7N60A4
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB | 9600 |
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RFQ |
Part Details for HGTP7N60A4
HGTP7N60A4 CAD Models
HGTP7N60A4 Part Data Attributes:
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HGTP7N60A4
Fairchild Semiconductor Corporation
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Datasheet
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HGTP7N60A4
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | TO-220AB, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 34 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 205 ns | |
Turn-on Time-Nom (ton) | 17 ns |
Alternate Parts for HGTP7N60A4
This table gives cross-reference parts and alternative options found for HGTP7N60A4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP7N60A4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SGW20N60FKSA1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | HGTP7N60A4 vs SGW20N60FKSA1 |
SKW30N60FKSA1 | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | HGTP7N60A4 vs SKW30N60FKSA1 |
HGT1S12N60C3DS | 24A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN | Intersil Corporation | HGTP7N60A4 vs HGT1S12N60C3DS |
SGW20N60 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | HGTP7N60A4 vs SGW20N60 |
HGTG40N60B3 | 70A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTP7N60A4 vs HGTG40N60B3 |
IRG4PC30FDPBF | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | HGTP7N60A4 vs IRG4PC30FDPBF |
HGT1S12N60A4DS9A | 54A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGTP7N60A4 vs HGT1S12N60A4DS9A |
HGTP3N60C3D | 6A, 600V, N-CHANNEL IGBT, TO-220AB | Intersil Corporation | HGTP7N60A4 vs HGTP3N60C3D |
HGT1S7N60C3DS | 14A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGTP7N60A4 vs HGT1S7N60C3DS |
SKW30N60 | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | HGTP7N60A4 vs SKW30N60 |