Datasheets
HGTP2N120CND by:

Insulated Gate Bipolar Transistor, 2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

Part Details for HGTP2N120CND by Harris Semiconductor

Overview of HGTP2N120CND by Harris Semiconductor

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Component Electronics, Inc IN STOCK SHIP TODAY 10
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Part Details for HGTP2N120CND

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HGTP2N120CND Part Data Attributes

HGTP2N120CND Harris Semiconductor
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HGTP2N120CND Harris Semiconductor Insulated Gate Bipolar Transistor, 2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON

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