Part Details for HGTP14N40F3VL by Harris Semiconductor
Overview of HGTP14N40F3VL by Harris Semiconductor
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Part Details for HGTP14N40F3VL
HGTP14N40F3VL CAD Models
HGTP14N40F3VL Part Data Attributes:
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HGTP14N40F3VL
Harris Semiconductor
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HGTP14N40F3VL
Harris Semiconductor
Insulated Gate Bipolar Transistor, 19A I(C), 350V V(BR)CES, N-Channel, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | VOLTAGE CLAMPING | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 19 A | |
Collector-Emitter Voltage-Max | 350 V | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
Gate-Emitter Thr Voltage-Max | 2 V | |
Gate-Emitter Voltage-Max | 10 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 83 W | |
Power Dissipation-Max (Abs) | 83 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AUTOMOTIVE IGNITION | |
Transistor Element Material | SILICON | |
VCEsat-Max | 2 V |