Datasheets
HGTP10N120BN by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ALTERNATE VERSION, TO-220AB, 3 PIN

Part Details for HGTP10N120BN by Fairchild Semiconductor Corporation

Overview of HGTP10N120BN by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HGTP10N120BN

Part # Distributor Description Stock Price Buy
Win Source Electronics IGBT 1200V 35A 298W TO220AB 18542
  • 4 $14.1310
  • 9 $11.5950
  • 14 $11.2320
  • 19 $10.8700
  • 24 $10.5080
  • 32 $9.4210
$9.4210 / $14.1310 Buy Now

Part Details for HGTP10N120BN

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HGTP10N120BN Part Data Attributes:

HGTP10N120BN Fairchild Semiconductor Corporation
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HGTP10N120BN Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ALTERNATE VERSION, TO-220AB, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 200 ns
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 298 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 330 ns
Turn-on Time-Nom (ton) 32 ns

Alternate Parts for HGTP10N120BN

This table gives cross-reference parts and alternative options found for HGTP10N120BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP10N120BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP10N120BN 35A, 1200V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN Intersil Corporation HGTP10N120BN vs HGTP10N120BN
Part Number Description Manufacturer Compare
HGT1S12N60B3DS 27A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGTP10N120BN vs HGT1S12N60B3DS
IRG4PC50UDPBF Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTP10N120BN vs IRG4PC50UDPBF
HGTG30N60B3D 600V, PT IGBT, 450-TUBE onsemi HGTP10N120BN vs HGTG30N60B3D
HGTP7N60A4 34A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGTP10N120BN vs HGTP7N60A4
HGTG12N60C3D 24A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTP10N120BN vs HGTG12N60C3D
SGP30N60 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGTP10N120BN vs SGP30N60
HGTP3N60A4D 17A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGTP10N120BN vs HGTP3N60A4D
IRG4BC30KDPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTP10N120BN vs IRG4BC30KDPBF
SGP15N60 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGTP10N120BN vs SGP15N60
SGB15N60 31A, 600V, N-CHANNEL IGBT, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC HGTP10N120BN vs SGB15N60

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