Datasheets
HGTH20N40C1D by:

Insulated Gate Bipolar Transistor, 20A I(C), 400V V(BR)CES, N-Channel, TO-218AC

Part Details for HGTH20N40C1D by Harris Semiconductor

Overview of HGTH20N40C1D by Harris Semiconductor

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Price & Stock for HGTH20N40C1D

Part # Distributor Description Stock Price Buy
Rochester Electronics 20A, 400V, N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 74
  • 1 $3.4400
  • 25 $3.3700
  • 100 $3.2300
  • 500 $3.0900
  • 1,000 $2.9200
$2.9200 / $3.4400 Buy Now

Part Details for HGTH20N40C1D

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HGTH20N40C1D Part Data Attributes:

HGTH20N40C1D Harris Semiconductor
Buy Now Datasheet
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HGTH20N40C1D Harris Semiconductor Insulated Gate Bipolar Transistor, 20A I(C), 400V V(BR)CES, N-Channel, TO-218AC
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 400 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-Emitter Thr Voltage-Max 4.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-218AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Rise Time-Max (tr) 50 ns
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Max (ton) 50 ns
VCEsat-Max 3.2 V

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