Part Details for HGTG30N60C3D by Fairchild Semiconductor Corporation
Overview of HGTG30N60C3D by Fairchild Semiconductor Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTG30N60C3D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTG30N60C3D-ND
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DigiKey | IGBT 600V 63A TO247 Min Qty: 44 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
7113 In Stock |
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$6.9600 | Buy Now |
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Bristol Electronics | 645 |
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RFQ | ||
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Quest Components | TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,63A I(C),TO-247AA | 516 |
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$3.6000 / $7.2000 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 63A, 600V, N-Channel, TO-247 RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 7113 |
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$5.6900 / $6.6900 | Buy Now |
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ComSIT USA | 600 V, 63 A, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant |
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RFQ |
Part Details for HGTG30N60C3D
HGTG30N60C3D CAD Models
HGTG30N60C3D Part Data Attributes
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HGTG30N60C3D
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
HGTG30N60C3D
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-247 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 63 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 275 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 550 ns | |
| Turn-on Time-Nom (ton) | 85 ns |
Alternate Parts for HGTG30N60C3D
This table gives cross-reference parts and alternative options found for HGTG30N60C3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG30N60C3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HGT1S5N120BNS9A | Intersil Corporation | Check for Price | 21A, 1200V, N-CHANNEL IGBT, TO-263AB | HGTG30N60C3D vs HGT1S5N120BNS9A |
| HGTP3N60C3DR | Intersil Corporation | Check for Price | 6A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3 | HGTG30N60C3D vs HGTP3N60C3DR |
| IRG4BC20FD-STRRPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | HGTG30N60C3D vs IRG4BC20FD-STRRPBF |
| HGT1S12N60C3S9A | Intersil Corporation | Check for Price | 24A, 600V, N-CHANNEL IGBT, TO-263AB | HGTG30N60C3D vs HGT1S12N60C3S9A |
| IRG4PH40KDPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | HGTG30N60C3D vs IRG4PH40KDPBF |
| IRG4PH50UPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | HGTG30N60C3D vs IRG4PH50UPBF |
| HGTP3N60A4D | onsemi | Check for Price | 600V, SMPS IGBT, TO-220 3L, 6400-RAIL | HGTG30N60C3D vs HGTP3N60A4D |
| HGT5A40N60A4D | Intersil Corporation | Check for Price | 75A, 600V, N-CHANNEL IGBT, PLASTIC, TO-247, 3 PIN | HGTG30N60C3D vs HGT5A40N60A4D |
| HGTG11N120CND | Intersil Corporation | Check for Price | 11A, 1200V, N-CHANNEL IGBT, TO-247 | HGTG30N60C3D vs HGTG11N120CND |
| HGTP7N60A4 | onsemi | Check for Price | IGBT, 600V, SMPS, TO-220-3, 800-TUBE | HGTG30N60C3D vs HGTP7N60A4 |