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Transistors / IGBTs / HGTG30N60A4
Datasheets
HGTG30N60A4 by:

75A, 600V, N-CHANNEL IGBT, TO-247

Part Details for HGTG30N60A4 by Intersil Corporation

Overview of HGTG30N60A4 by Intersil Corporation

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Part Details for HGTG30N60A4

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HGTG30N60A4 Part Data Attributes

Parametric Data
HGTG30N60A4 Intersil Corporation
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HGTG30N60A4 Intersil Corporation 75A, 600V, N-CHANNEL IGBT, TO-247
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 238 ns
Turn-on Time-Nom (ton) 35 ns

Alternate Parts for HGTG30N60A4

This table gives cross-reference parts and alternative options found for HGTG30N60A4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG30N60A4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG30N60A4 IGBT, 600V, SMPS, 450-TUBE onsemi HGTG30N60A4 vs HGTG30N60A4
Part Number Description Manufacturer Compare
HGT1S12N60B3DS 27A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGTG30N60A4 vs HGT1S12N60B3DS
HGTG30N120CN 30A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG30N60A4 vs HGTG30N120CN
HGTG27N120BN Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG30N60A4 vs HGTG27N120BN
IRG4IBC30KDPBF Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PAK-3 International Rectifier HGTG30N60A4 vs IRG4IBC30KDPBF
SGP04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGTG30N60A4 vs SGP04N60
SKW30N60FKSA1 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG HGTG30N60A4 vs SKW30N60FKSA1
IRG4PH30KPBF Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier HGTG30N60A4 vs IRG4PH30KPBF
IRG4PF50WDPBF Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTG30N60A4 vs IRG4PF50WDPBF
IRG4PSC71KPBF Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN International Rectifier HGTG30N60A4 vs IRG4PSC71KPBF
GT80J101 TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components HGTG30N60A4 vs GT80J101

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