Part Details for HGTG20N60C3DR by Harris Semiconductor
Results Overview of HGTG20N60C3DR by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
HGTG20N60C3DR Information
HGTG20N60C3DR by Harris Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for HGTG20N60C3DR
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 2 |
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RFQ |
Part Details for HGTG20N60C3DR
HGTG20N60C3DR CAD Models
HGTG20N60C3DR Part Data Attributes
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HGTG20N60C3DR
Harris Semiconductor
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Datasheet
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HGTG20N60C3DR
Harris Semiconductor
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | PLASTIC PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 400 ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 164 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 40 ns | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 390 ns | |
| Turn-on Time-Nom (ton) | 34 ns |
Alternate Parts for HGTG20N60C3DR
This table gives cross-reference parts and alternative options found for HGTG20N60C3DR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG20N60C3DR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HGTG20N60C3DR | Intersil Corporation | Check for Price | 40A, 600V, N-CHANNEL IGBT, TO-247 | HGTG20N60C3DR vs HGTG20N60C3DR |