Datasheets
HGTG12N60A4 by:

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Part Details for HGTG12N60A4 by Fairchild Semiconductor Corporation

Overview of HGTG12N60A4 by Fairchild Semiconductor Corporation

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Part Details for HGTG12N60A4

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HGTG12N60A4 Part Data Attributes:

HGTG12N60A4 Fairchild Semiconductor Corporation
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HGTG12N60A4 Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 95 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for HGTG12N60A4

This table gives cross-reference parts and alternative options found for HGTG12N60A4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG12N60A4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG12N60A4 54A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG12N60A4 vs HGTG12N60A4
Part Number Description Manufacturer Compare
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor HGTG12N60A4 vs SGP5N60RUFD
GT25Q101 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components HGTG12N60A4 vs GT25Q101
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation HGTG12N60A4 vs HGT1S12N60B3S9A
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor HGTG12N60A4 vs HGTP20N60C3R
IRG4BC20FD-STRL Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier HGTG12N60A4 vs IRG4BC20FD-STRL
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc HGTG12N60A4 vs IXGH36N60A3D4
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN Infineon Technologies AG HGTG12N60A4 vs IRGPS40B120U
SGP5N60RUF Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor HGTG12N60A4 vs SGP5N60RUF
IRG4PC40UD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG HGTG12N60A4 vs IRG4PC40UD
IXSH10N120A Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG12N60A4 vs IXSH10N120A

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