Part Details for HGTD7N60B3S by Harris Semiconductor
Overview of HGTD7N60B3S by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTD7N60B3S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2156-HGTD7N60B3S-ND
|
DigiKey | 14A, 600V, UFS N-CHANNEL IGBT Min Qty: 398 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
703 In Stock |
|
$0.7500 | Buy Now |
|
|
Rochester Electronics | 14A, 600V, UFS N-Channel IGBT ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 703 |
|
RFQ |
Part Details for HGTD7N60B3S
HGTD7N60B3S CAD Models
HGTD7N60B3S Part Data Attributes
|
|
HGTD7N60B3S
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
HGTD7N60B3S
Harris Semiconductor
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 14 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 80 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |