Datasheets
HGTD7N60B3 by:

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA

Part Details for HGTD7N60B3 by Harris Semiconductor

Overview of HGTD7N60B3 by Harris Semiconductor

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Price & Stock for HGTD7N60B3

Part # Distributor Description Stock Price Buy
DISTI # 2156-HGTD7N60B3-ND
DigiKey IGBT 600V 14A IPAK Min Qty: 410 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 900
In Stock
  • 410 $0.7300
$0.7300 Buy Now
Rochester Electronics 14A, 600V, UFS SERIES N-Channel IGBT ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 900
RFQ

Part Details for HGTD7N60B3

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HGTD7N60B3 Part Data Attributes

HGTD7N60B3 Harris Semiconductor
Buy Now Datasheet
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HGTD7N60B3 Harris Semiconductor Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 14 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 80 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for HGTD7N60B3

This table gives cross-reference parts and alternative options found for HGTD7N60B3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD7N60B3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTD7N60B3 600V, N-CHANNEL IGBT, TO-251AA Intersil Corporation HGTD7N60B3 vs HGTD7N60B3
Part Number Description Manufacturer Compare
1MB20D-060 Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd HGTD7N60B3 vs 1MB20D-060
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HGTD7N60B3 vs SGP13N60UF
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGTD7N60B3 vs HGTG30N60C3
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTD7N60B3 vs HGTP12N60D1
SGB15N60HS Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3 Infineon Technologies AG HGTD7N60B3 vs SGB15N60HS
APT30GP60SG Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN Microsemi Corporation HGTD7N60B3 vs APT30GP60SG
MGP14N60E 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN onsemi HGTD7N60B3 vs MGP14N60E
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG HGTD7N60B3 vs IRG4BC20W-S
IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 IXYS Corporation HGTD7N60B3 vs IXDA20N120AS
SGW15N120 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG HGTD7N60B3 vs SGW15N120

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