Part Details for HGTD6N40E1 by Harris Semiconductor
Overview of HGTD6N40E1 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HGTD6N40E1
HGTD6N40E1 CAD Models
HGTD6N40E1 Part Data Attributes:
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HGTD6N40E1
Harris Semiconductor
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Datasheet
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HGTD6N40E1
Harris Semiconductor
Insulated Gate Bipolar Transistor, 7.5A I(C), 400V V(BR)CES, N-Channel, TO-251AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 7.5 A | |
| Collector-Emitter Voltage-Max | 400 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 4.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Power Dissipation-Max (Abs) | 60 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.4 V |
Alternate Parts for HGTD6N40E1
This table gives cross-reference parts and alternative options found for HGTD6N40E1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD6N40E1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTD8P50G1 | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel, TO-251AA | Harris Semiconductor | HGTD6N40E1 vs HGTD8P50G1 |
| HGTD7N60C3 | 14A, 600V, N-CHANNEL IGBT, TO-220AB | Intersil Corporation | HGTD6N40E1 vs HGTD7N60C3 |
| HGTD7N60C3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-251AA | Harris Semiconductor | HGTD6N40E1 vs HGTD7N60C3 |
| SGU06N60 | Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-251AA, PLASTIC, IPAK-3 | Infineon Technologies AG | HGTD6N40E1 vs SGU06N60 |
| HGTD6N40E1S | Insulated Gate Bipolar Transistor, 7.5A I(C), 400V V(BR)CES, N-Channel, TO-252AA | Harris Semiconductor | HGTD6N40E1 vs HGTD6N40E1S |