Part Details for HGTD10N50F1S by Harris Semiconductor
Overview of HGTD10N50F1S by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Price & Stock for HGTD10N50F1S
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 10A, 500V N-Channel IGBT ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 495 |
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RFQ |
Part Details for HGTD10N50F1S
HGTD10N50F1S CAD Models
HGTD10N50F1S Part Data Attributes
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HGTD10N50F1S
Harris Semiconductor
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Datasheet
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HGTD10N50F1S
Harris Semiconductor
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 12 A | |
| Collector-Emitter Voltage-Max | 500 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 4.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.2 V |